TSM180N03CS 30V N-Channel Power MOSFET SOP-8 Pin Definition: Key Parameter Performance 1. Source 8. Drain Parameter Value Unit 2. Source 7. Drain 3. Source 6. Drain V 30 V DS 4. Gate 5. Drain V = 10V 18 GS R (max) m DS(on) V = 4.5V 28 GS Q 4.1 nC g Block Diagram Ordering Information Part No. Package Packing TSM180N03CS RLG SOP-8 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET o Absolute Maximum Ratings (Tc=25 C unless otherwise noted) Limit Parameter Symbol Unit 30 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS 9 Tc=25C A Continuous Drain Current I D 5.7 Tc=100C A (Note 1) 36 Pulsed Drain Current I A DM (Note 2) Single Pulse Avalanche Energy E 32 mJ AS o Power Dissipation T = 25 C P 2.5 W C D Operating Junction Temperature T 150 C J o -55 to +150 Storage Temperature Range T C STG Thermal Performance Parameter Symbol Limit Unit o Thermal Resistance - Junction to Ambient R 50 C/W JA 1/5 Version: A14 TSM180N03CS 30V N-Channel Power MOSFET o Electrical Specifications (T =25 C unless otherwise noted) J Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A GS D BV 30 -- -- V DSS V = 10V, I = 8A GS D -- 16 18 Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 5A GS D -- 23 28 Gate Threshold Voltage V = V , I = 250A V 1.2 1.6 2 V DS GS D GS(TH) V = 30V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 24V, T = 125C -- -- 10 DS J Gate Body Leakage V = 20V, V = 0V GS DS I -- -- 100 nA GSS (Note 3) Forward Transconductance V = 10V, I = 5A g -- 4 -- S DS D fs Dynamic (Note 3,4) Total Gate Charge Q g -- 4.1 -- V = 15V, I = 8A, (Note 3,4) DS D Gate-Source Charge Q gs -- 1 -- nC V = 4.5V GS (Note 3,4) Gate-Drain Charge Q -- 2.1 -- gd Input Capacitance C -- 345 -- iss V = 25V, V = 0V, DS GS Output Capacitance C oss -- 55 -- pF f = 1.0MHz Reverse Transfer Capacitance C rss -- 32 -- Switching (Note 3,4) Turn-On Delay Time t -- 2.8 -- d(on) (Note 3,4) Turn-On Rise Time t r -- 7.2 -- V = 15V, I = 1A, DD D ns (Note 3,4) V = 10V, R =6 Turn-Off Delay Time t GS G d(off) -- 15.8 -- (Note 3,4) Turn-Off Fall Time t f -- 4.6 -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source I -- -- 9 A S Diode Forward Current Integral reverse diode in the MOSFET Maximum Pulse Drain-Source Diode I -- -- 36 A SM Forward Current V SD Diode-Source Forward Voltage V = 0V, I = 1A -- -- 1 V GS S Note: 1. Pulse width limited by safe operating area 2. L=1mH, I =8A, V =25V, R =25, Starting T =25C AS DD G J 3. Pulse test: pulse width 300s, duty cycle 2% 4. Switching time is essentially independent of operating temperature. 2/5 Version: A14