SUM90142E www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES TO-263 ThunderFET power MOSFET Maximum 175 C junction temperature 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 SS APPLICATIONS D DD GG Power supplies: Top View - Uninterruptible power supplies - AC/DC switch-mode power supplies PRODUCT SUMMARY - Lighting G V (V) 200 DS Synchronous rectification R max. ( ) at V = 10 V 0.0150 DS(on) GS DC/DC converter R max. ( ) at V = 7.5 V 0.0165 DS(on) GS Motor drive switch S Q typ. (nC) 58 g DC/AC inverter N-Channel MOSFET I (A) 90 D Solar micro inverter Configuration Single Class D audio amplifier ORDERING INFORMATION Package TO-263 Lead (Pb)-free and halogen-free SUM90142E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 200 DS V Gate-source voltage V 20 GS T = 25 C 90 C Continuous drain current I D T = 125 C 52 C Pulsed drain current (t = 100 s) I 240 A DM Continuous source-drain diode current I 90 S a Single pulse avalanche current I 60 AS L = 0.1 mH a Single pulse avalanche energy E 180 mJ AS b T = 25 C 375 C Maximum power dissipation P W D b T = 125 C 125 C Operating junction and storage temperature range T , T -55 to +175 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MAXIMUM UNIT c Maximum junction-to-ambient (PCB mount) R 40 thJA C/W Maximum junction-to-case (drain) Steady state R 0.4 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR4 material). d. Package limited. S16-1636-Rev. A, 22-Aug-16 Document Number: 75050 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM90142E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 200 - - V DS GS D Gate-source threshold voltage V V = V , I = 250 A 2 - 4 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 200 V, V = 0 V - - 1 DS GS A Zero gate voltage drain current I V = 200 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 200 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-state drain current I V 10 V, V = 10 V 60 - - A D(on) DS GS V = 10 V, I = 30 A - 0.0123 0.0150 GS D a Drain-source on-state resistance R DS(on) V = 7.5 V, I = 30 A - 0.0130 0.0165 GS D a Forward transconductance g V = 15 V, I = 30 A - 63 - S fs DS D b Dynamic Input capacitance C - 3120 - iss Output capacitance C -V = 100 V, V = 0 V, f = 1 MHz280- pF oss DS GS Reverse transfer capacitance C -24- rss Total gate charge Q -58 87 g Gate-source charge Q -V = 100 V, V = 10 V, I = 60 A17.6- gs DS GS D nC Gate-drain charge Q - 17.2 - gd Output charge Q V = 100 V, V = 0 V - 108 162 oss DS GS Gate resistance R f = 1 MHz 1.5 3 5 g Turn-on delay time t -14 28 d(on) Rise time t -125250 r V = 100 V, R = 1.66 , I 60 A, DD L D ns V = 10 V, R = 1 Turn-off delay time t -2GEN g 754 d(off) Fall time t - 80 150 f Drain-Source Body Diode Characteristics Pulse diode forward current (t = 100 s) I - - 240 A SM Body diode voltage V I = 30 A, V = 0 V - 0.85 1.5 V SD F GS Body diode reverse recovery time t - 150 300 ns rr Body diode reverse recovery charge Q -0.9 1.8 nC rr I = 30 A, dI/dt = 100 A/s F Reverse recovery fall time t - 125 - a ns Reverse recovery rise time t -25 - b Body diode peak reverse recovery charge I - 11.5 20 A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1636-Rev. A, 22-Aug-16 Document Number: 75050 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000