Product Information

TSM3404CX RF

TSM3404CX RF electronic component of Taiwan Semiconductor

Datasheet
Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

334: USD 0.2925 ea
Line Total: USD 97.7

0 - Global Stock
MOQ: 334  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 334
Multiples : 1

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TSM3404CX RF
Taiwan Semiconductor

334 : USD 0.2925

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Operating Temperature Classification
Operating Temp Range
Gate-Source Voltage Max
Number Of Elements
Rad Hardened
Drain-Source On-Volt
Type
Pin Count
Package Type
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Additional Infomation About Product

TSM3404 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate V (V) R (m) I (A) DS DS(on) D 2. Source 3. Drain 30 V = 10V 5.8 GS 30 43 V = 4.5V 5.0 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM3404CX RFG SOT-23 3Kpcs / 7 Reel N-Channel MOSFET Note: G denotes Halogen Free Product. o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 5.8 A D Pulsed Drain Current I 20 A DM a,b Continuous Source Current (Diode Conduction) I 2.5 A S o Ta = 25 C 0.75 Maximum Power Dissipation P W D o Ta = 75 C 0.48 Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit C/W Junction to Foot Thermal Resistance R 75 JF Junction to Ambient Thermal Resistance (PCB mounted) R 140 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. Document Number: DS P0000073 1 Version: B15 TSM3404 30V N-Channel MOSFET o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 1.4 3 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 100 A GS DS GSS Zero Gate Voltage Drain Current V = 24V, V = 0V I -- -- 1.0 A DS GS DSS On-State Drain Current V = 5V, V = 4.5V I 20 -- -- A DS GS D(ON) V = 10V, I = 5.8A -- 23 30 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 5A -- 35 43 GS D Forward Transconductance V = 5V, I = 5A g -- 25 -- S DS D fs Diode Forward Voltage I = 1.0A, V = 0V V -- 0.76 1 V S GS SD b Dynamic Total Gate Charge Q -- 4.52 -- g V = 15V, I = 5.8A, DS D Gate-Source Charge Q -- 1.24 -- nC gs V = 10V GS Gate-Drain Charge Q -- 1.68 -- gd Input Capacitance C -- 400.96 -- iss V = 15V, V = 0V, DS GS Output Capacitance C -- 100.47 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 71.82 -- rss c Switching Turn-On Delay Time t -- 7.42 -- d(on) V = 15V, R = 2.2, DD L Turn-On Rise Time t -- 3.41 -- r I = 1A, V = 10V, nS D GEN Turn-Off Delay Time t -- 20.4 -- d(off) R = 6 G Turn-Off Fall Time t -- 3.01 -- f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. Document Number: DS P0000073 2 Version: B15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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