TSM3457 30V P-Channel MOSFET SOT-26 Pin Definition: Key Parameter Performance 1. Drain 6. Drain Parameter Value Unit 2. Drain 5. Drain 3. Gate 4. Source V -30 V DS V = -10V GS 60 R (max) m DS(on) V = -4.5V GS 100 Q 9.52 nC g Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Ordering Information Part No. Package Packing TSM3457CX6 RFG SOT-26 3kpcs / 7 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds P-Channel MOSFET Absolute Maximum Ratings (T = 25C unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -5 A D Pulsed Drain Current I -20 A DM (Note 1,2) Continuous Source Current (Diode Conduction) I -1.7 A S T =25C 2.0 A Maximum Power Dissipation P W D T =70C 1.3 A Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance R 30 C/W JC Junction to Ambient Thermal Resistance (PCB mounted) R 80 C/W JA Document Number: DS P0000079 1 Version: E15 TSM3457 30V P-Channel MOSFET Electrical Specifications (T = 25C unless otherwise noted) A Parameter Conditions Symbol Min Typ Max Unit (Note 3) Static Drain-Source Breakdown Voltage V = 0V, I = -250A BV -30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = -250A V DS GS D GS(TH) -1.0 -1.5 -3.0 V Gate Body Leakage V = 20V, V = 0V I GS DS GSS -- -- 100 nA Zero Gate Voltage Drain Current V = -24V, V = 0V I DS GS DSS -- -- -1.0 A On-State Drain Current V =-5V, V = -10V I -20 -- -- A DS GS D(ON) V = -4.5V, I = -3.7A -- 82 100 GS D Drain-Source On-State Resistance R m DS(ON) V = -10V, I = -5A GS D -- 50 60 Forward Transconductance V = -15V, I = -5A g -- 10 -- S DS D fs Diode Forward Voltage I = -1.7A, V = 0V V -- -0.8 -1.2 V S GS SD (Note 4,5) Dynamic Total Gate Charge Q -- 9.52 g V = -15V, I = -3.7A, DS D Gate-Source Charge Q -- 3.43 -- nC gs V = -10V GS Gate-Drain Charge Q -- 1.71 -- gd Input Capacitance C -- 551.57 -- iss V = -15V, V = 0V, DS GS Output Capacitance C -- 90.96 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C -- 60.79 -- rss (Note 4,5) Switching Turn-On Delay Time t -- -- 10.8 d(on) V = -15V, R = 15, DD L Turn-On Rise Time t -- 2.33 -- r I = -1A, V = -10V, ns D GEN Turn-Off Delay Time t -- 22.53 -- d(off) R = 6 G Turn-Off Fall Time t -- 3.87 -- f Notes: 1. Pulse width limited by the Maximum junction temperature 2. Surface Mounted on FR4 Board, t 5 sec. 3. pulse test: PW 300S, duty cycle 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Document Number: DS P0000079 2 Version: E15