Product Information

TSM600P03CS RLG

Hot TSM600P03CS RLG electronic component of Taiwan Semiconductor

Datasheet
MOSFET -30V, -4.7A, Single P-Channel Power MOSFET
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0832 ea
Line Total: USD 0.08

3351 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3351 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

TSM600P03CS RLG
Taiwan Semiconductor

1 : USD 0.0832
10 : USD 0.0695
25 : USD 0.0688
50 : USD 0.0681
100 : USD 0.0512
250 : USD 0.0507
500 : USD 0.0394
1000 : USD 0.0289
3000 : USD 0.0239

3676 - WHS 2


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

TSM600P03CS RLG
Taiwan Semiconductor

1 : USD 0.3691
10 : USD 0.3047
100 : USD 0.2242
500 : USD 0.184
1000 : USD 0.1587
10000 : USD 0.1449
50000 : USD 0.1414

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Hts Code
LoadingGif

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Additional Infomation About Product

TSM600P03CS 30V P-Channel Power MOSFET SOP-8 Key Parameter Performance Parameter Value Unit V -30 V DS V =-10V 60 GS R (max) m DS(on) V =-4.5V 90 GS Q 5.1 nC g Block Diagram Ordering Information Part No. Package Packing TSM600P03CS RLG SOP-8 2.5kps / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds P-Channel MOSFET o Absolute Maximum Ratings (Tc = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS Tc = 25C -4.7 A Continuous Drain Current* I D Tc = 100C -3 A (Note 1) Pulsed Drain Current I -18.8 A DM o Power Dissipation T = 25 C P 2.1 W C D o Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit o Thermal Resistance - Junction to Ambient R 50 C/W JA 1/5 Version: B1612 TSM600P03CS 30V P-Channel Power MOSFET o Electrical Specifications (T = 25 C unless otherwise noted) J Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV -30 -- -- V GS D DSS V = -10V, I = -3A -- 44 60 GS D Drain-Source On-State Resistance R m DS(ON) V = -4.5V, I = -2A 73 90 GS D Gate Threshold Voltage V = V , I = 250A V -1.2 -1.6 -2.5 V DS GS D GS(TH) V = -30V, T = 25C -- -- -1 DS J Zero Gate Voltage Drain Current I A DSS V = -24V, T = 125C -- -- -10 DS J Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS (Note 2) Forward Transconductance V = -10V, I = -3A g -- 3.5 -- S DS D fs Dynamic (Note 2,3) Total Gate Charge Q -- 5.1 -- g V = -15V, I = -3A, DS D (Note 2,3) nC Gate-Source Charge Q -- 2 -- gs V = -4.5V GS (Note 2,3) Gate-Drain Charge Q -- 2.2 -- gd Input Capacitance C -- 560 -- iss V = -15V, V = 0V, DS GS Output Capacitance C -- 55 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 40 -- rss Switching (Note 2,3) Turn-On Delay Time t -- 3.4 -- d(on) (Note 2,3) Turn-On Rise Time t -- 10.8 -- V = -15V, I = -1A, DD D r ns (Note 2,3) Turn-Off Delay Time V = -10V, R =6 t -- 26.9 -- GS G d(off) (Note 2,3) Turn-Off Fall Time t -- 6.9 -- f Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source I -- -- -4.7 A S Diode Forward Current Integral reverse diode in Maximum Pulse Drain-Source Diode the MOSFET I -- -- -18.8 A SM Forward Current Diode-Source Forward Voltage V = 0V, I = -1A V -- -- -1 V GS S SD Note: 1. Pulse width limited by safe operating area 2. Pulse test: pulse width 300s, duty cycle 2% 3. Switching time is essentially independent of operating temperature. 2/5 Version: B1612

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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