IRFI820G, SiHFI820G
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Isolated Package
V (V) 500
DS
High Voltage Isolation = 2.5 kV (t = 60 s,
Available
RMS
R ()V = 10 V 3.0
DS(on) GS
f = 60 Hz)
RoHS*
Q (Max.) (nC) 24
g COMPLIANT
Sink to Lead Creepage Distance = 4.8 mm
Q (nC) 3.3
gs
Dynamic dV/dt Rating
Q (nC) 13
gd
Low Thermal Resistance
Configuration Single
Lead (Pb)-free Available
D
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
S
capability and a low thermal resistance between the tab and
S
D
G
external heatsink. The isolation is equivalent to using a 100
N-Channel MOSFET
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
ORDERING INFORMATION
Package TO-220 FULLPAK
IRFI820GPbF
Lead (Pb)-free
SiHFI820G-E3
IRFI820G
SnPb
SiHFI820G
ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted
C
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage V 500
DS
V
Gate-Source Voltage V 20
GS
T = 25 C 2.1
C
Continuous Drain Current V at 10 V I
GS D
T = 100 C 1.3 A
C
a
Pulsed Drain Current I 8.4
DM
Linear Derating Factor 0.24 W/C
b
Single Pulse Avalanche Energy E 110 mJ
AS
a
Repetitive Avalanche Current I 2.1 A
AR
a
Repetitive Avalanche Energy E 3.0 mJ
AR
Maximum Power Dissipation T = 25 C P 30 W
C D
c
Peak Diode Recovery dV/dt dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range T , T - 55 to + 150
J stg
C
d
Soldering Recommendations (Peak Temperature) for 10 s 300
10 lbf in
Mounting Torque 6-32 or M3 screw
1.1 N m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V = 50 V, starting T = 25 C, L = 44 mH, R = 25 , I = 2.1 A (see fig. 12).
DD J G AS
c. I 2.1 A, dI/dt 50 A/s, V V , T 150 C.
SD DD DS J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91158 www.vishay.com
S-81290-Rev. A, 16-Jun-08 1IRFI820G, SiHFI820G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLTYP. MAX. UNIT
Maximum Junction-to-Ambient R -65
thJA
C/W
Maximum Junction-to-Case (Drain) R -4.1
thJC
SPECIFICATIONS T = 25 C, unless otherwise noted
J
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - -
DS GS D V
V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.59 -
DS DS J D V/C
Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0
GS(th) DS GS D V
Gate-Source Leakage I V = 20 V - - 100 nA
GSS GS
V = 500 V, V = 0 V - - 25
DS GS
Zero Gate Voltage Drain Current I A
DSS
V = 400 V, V = 0 V, T = 125 C - - 250
DS GS J
b
Drain-Source On-State Resistance R V = 10 V I = 1.3 A -- 3.0
DS(on) GS D
b
Forward Transconductance g V = 50 V, I = 1.3 A 1.5 - -
fs DS D S
Dynamic
Input Capacitance C - 360 -
iss
V = 0 V,
GS
Output Capacitance C -9V = 25 V, 2-
oss DS
pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance C -37-
rss
Drain to Sink Capacitance C f = 1.0 MHz - 12 -
Total Gate Charge Q -- 24
g
I = 2.1 A, V = 400 V,
D DS
Gate-Source Charge Q --V = 10 V 3.3 nC
gs GS
b
see fig. 6 and 13
Gate-Drain Charge Q --13
gd
Turn-On Delay Time t -8.0 -
d(on)
Rise Time t -8.6 -
r
V = 250 V, I = 2.1 A ,
DD D ns
b
R = 18 , R = 120 , see fig. 10
Turn-Off Delay Time t -33-
d(off) G D
Fall Time t -16-
f
D
Between lead,
Internal Drain Inductance L -4.5 -
D
6 mm (0.25") from
nH
package and center of
G
die contact
Internal Source Inductance L -7.5 -
S
S
Drain-Source Body Diode Characteristics
MOSFET symbol
D
Continuous Source-Drain Diode Current I -- 2.1
S
showing the
A
integral reverse
G
a
p - n junction diode
Pulsed Diode Forward Current I -- 8.0
SM
S
b
Body Diode Voltage V T = 25 C, I = 2.1 A, V = 0 V -- 1.6 V
SD J S GS
Body Diode Reverse Recovery Time t - 260 520 ns
rr
b
T = 25 C, I = 2.1 A, dI/dt = 100 A/s
J F
Body Diode Reverse Recovery Charge Q -0.70 1.4 C
rr
Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L )
on S D
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
www.vishay.com Document Number: 91158
2 S-81290-Rev. A, 16-Jun-08