XP151A11B0MR-G Torex Semiconductor

XP151A11B0MR-G electronic component of Torex Semiconductor
XP151A11B0MR-G Torex Semiconductor
XP151A11B0MR-G MOSFETs
XP151A11B0MR-G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of XP151A11B0MR-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. XP151A11B0MR-G MOSFETs are a product manufactured by Torex Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. XP151A11B0MR-G
Manufacturer: Torex Semiconductor
Category: MOSFETs
Description: MOSFET Power MOSFET, 30V, 1A, N-Type, SOT-23
Datasheet: XP151A11B0MR-G Datasheet (PDF)
Price (USD)
N/A

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Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7363
10$ 0.8183
100$ 0.4124
500$ 0.3494
1000$ 0.2703
3000$ 0.2458
6000$ 0.2297
9000$ 0.2159
24000$ 0.2094
N/A

Shipping Restricted

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1242
25$ 0.6622
54$ 0.3038
147$ 0.287
500$ 0.287
N/A

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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the XP151A11B0MR-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XP151A11B0MR-G and other electronic components in the MOSFETs category and beyond.

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XP151A11B0MR-G ETR1117 003 Power MOSFET GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. FEATURES APPLICATIONS Low On-State Resistance : Rds(on) = 0.12 Vgs = 10V Notebook PCs : Rds(on) = 0.17 Vgs = 4.5V Cellular and portable phones Ultra High-Speed Switching On-board power supplies Gate Protect Diode Built-in Driving Voltage : 4.5V Li-ion battery systems N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free PIN CONFIGURATION/ PRODUCT NAMES MARKING PRODUCTS PACKAGE ORDER UNIT XP151A11B0MR SOT-23 3,000/Reel (*) 1 1 1 x XP151A11B0MR-G SOT-23 3,000/Reel (*) The -G suffix denotes Halogen and Antimony free as well as GGate being fully RoHS compliant. S Source DDrain * x represents production lot number. EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS Ta = 25 PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss 30 V Gate - Source Voltage Vgss 20 V Drain Current (DC) Id 1 A Drain Current (Pulse) Idp 4 A Reverse Drain Current Idr 1 A Channel Power Dissipation * Pd 0.5 W Channel Temperature Tch 150 Storage Temperature Tstg -55~150 * When implemented on a ceramic PCB 1/5 XP151A11B0MR-G ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds= 30V, Vgs= 0V - - 10 A Gate-Source Leak Current Igss Vgs= 20V, Vds= 0V - - 10 A Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 1.0 - 3.0 V Id= 0.5A, Vgs= 10V - 0.09 0.12 Drain-Source On-State Resistance *1 Rds(on) Id= 0.5A, Vgs= 4.5V - 0.13 0.17 Forward Transfer Admittance *1 Yfs Id= 0.5A, Vds= 10V - 2.4 - S Body Drain Diode Vf If= 1A, Vgs= 0V - 0.8 1.1 V Forward Voltage *1 Effective during pulse test. Dynamic Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Input Capacitance Ciss - 150 - pF Vds= 10V, Vgs=0V Output Capacitance Coss - 90 - pF f=1MHz Feedback Capacitance Crss - 30 - pF Switching Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Turn-On Delay Time td (on) - 10 - ns Rise Time tr - 15 - ns Vgs= 5V, Id= 0.5A Vdd= 10V Turn-Off Delay Time td (off) - 25 - ns Fall Time tf - 45 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance Rth (ch-a) Implement on a ceramic PCB - 250 - /W (Channel-Ambience) 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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