Product Information

XP151A12A2MR-G

XP151A12A2MR-G electronic component of Torex Semiconductor

Datasheet
MOSFET Power MOSFET, 20V, 1A, N-Type, SOT-23

Manufacturer: Torex Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8641 ea
Line Total: USD 1.86

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

XP151A12A2MR-G
Torex Semiconductor

1 : USD 1.8641
10 : USD 0.7946
100 : USD 0.4391
500 : USD 0.3738
1000 : USD 0.2993
3000 : USD 0.263

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
XP161A1355PR-G electronic component of Torex Semiconductor XP161A1355PR-G

MOSFET Power MOSFET, 20V, 4A, N-Type, SOT-89
Stock : 0

XP162A11C0PR-G electronic component of Torex Semiconductor XP162A11C0PR-G

MOSFET Power MOSFET, -30V, 2.5A, P-Type, SOT-89
Stock : 0

XP162A12A6PR-G electronic component of Torex Semiconductor XP162A12A6PR-G

MOSFET Power MOSFET, -20V, 2.5A, P-Type, SOT-89
Stock : 0

XP161A11A1PR-G electronic component of Torex Semiconductor XP161A11A1PR-G

MOSFET Power MOSFET, 30V, 4A, N-Type, SOT-89
Stock : 0

XP161A1265PR-G electronic component of Torex Semiconductor XP161A1265PR-G

MOSFET Power MOSFET, 20V, 4A, N-Type, SOT-89
Stock : 0

XP152A12C0MR electronic component of Torex Semiconductor XP152A12C0MR

MOSFET P Trench 20V 700mA 300 mO @ 400mA,4.5V SOT-23 (SOT-23-3) RoHS
Stock : 0

XP151A13A0MR electronic component of Torex Semiconductor XP151A13A0MR

MOSFET N Trench 20V 1A 100 mΩ @ 500mA,4.5V SOT-23-3L RoHS
Stock : 165

XP162A12A6PR electronic component of Torex Semiconductor XP162A12A6PR

MOSFET P Trench 20V 2.5A 1.2V @ 1mA 170 mΩ @ 1.5A,4.5V SOT-89 (SOT-89-3) RoHS
Stock : 1310

XP161A1355PR electronic component of Torex Semiconductor XP161A1355PR

MOSFET N Trench 20V 4A 50 mΩ @ 2A,4.5V SOT-89 (SOT-89-3) RoHS
Stock : 0

XP202A0003MR-G electronic component of Torex Semiconductor XP202A0003MR-G

MOSFET Power MOSFET -30V 3A P-Type SOT-23
Stock : 0

Image Description
XP161A1355PR-G electronic component of Torex Semiconductor XP161A1355PR-G

MOSFET Power MOSFET, 20V, 4A, N-Type, SOT-89
Stock : 0

XP162A11C0PR-G electronic component of Torex Semiconductor XP162A11C0PR-G

MOSFET Power MOSFET, -30V, 2.5A, P-Type, SOT-89
Stock : 0

XP162A12A6PR-G electronic component of Torex Semiconductor XP162A12A6PR-G

MOSFET Power MOSFET, -20V, 2.5A, P-Type, SOT-89
Stock : 0

DMB53D0UV-7 electronic component of Diodes Incorporated DMB53D0UV-7

Diodes Incorporated MOSFET N-CHANNEL NPN ENHANCEMENT MODE
Stock : 2950

DMC1028UFDB-7 electronic component of Diodes Incorporated DMC1028UFDB-7

Diodes Incorporated MOSFET N-Ch 12VDss 8Vgss P-Ch 8Vdss 8Vgss
Stock : 4120

DMC2038LVTQ-7 electronic component of Diodes Incorporated DMC2038LVTQ-7

Transistor: N/P-MOSFET; unipolar; complementary; 20/-20V; 3/-2.1A
Stock : 1059000

DMC2041UFDB-7 electronic component of Diodes Incorporated DMC2041UFDB-7

Diodes Incorporated MOSFET 20V Complementary 12Vgs 0.6mm ESD
Stock : 3000

DMC2400UV-13 electronic component of Diodes Incorporated DMC2400UV-13

Diodes Incorporated MOSFET Comp Pair Enh FET 20Vds 0.58W 37pF
Stock : 10000

DMC2450UV-7 electronic component of Diodes Incorporated DMC2450UV-7

MOSFET Comp Pair Enh FET 20Vdss 12Vgss 0.45W
Stock : 12000

DMC25D0UVT-13 electronic component of Diodes Incorporated DMC25D0UVT-13

MOSFET 20V Enh Mode FET
Stock : 0

XP151A12A2MR-G ETR1118 003 Power MOSFET GENERAL DESCRIPTION The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. FEATURES APPLICATIONS Low On-State Resistance : Rds(on) = 0.1 Vgs = 4.5V Notebook PCs : Rds(on) = 0.16 Vgs = 2.5V Cellular and portable phones Ultra High-Speed Switching Gate Protect Diode Built-in On-board power supplies Driving Voltage : 2.5V Li-ion battery systems N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free PIN CONFIGURATION/ MARKING PRODUCT NAMES PRODUCTS PACKAGE ORDER UNIT XP151A12A2MR SOT-23 3,000/Reel 1 1 2 x GGate (*) SSource XP151A12A2MR-G SOT-23 3,000/Reel DDrain (*) The -G suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. * x represents production lot number. ABSOLUTE MAXIMUM RATINGS EQUIVALENT CIRCUIT Ta = 25 PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss 20 V Gate - Source Voltage Vgss 12 V Drain Current (DC) Id 1 A Drain Current (Pulse) Idp 4 A Reverse Drain Current Idr 1 A Channel Power Dissipation * Pd 0.5 W Channel Temperature Tch 150 Storage Temperature Tstg -55~150 * When implemented on a ceramic PCB 1/5 XP151A12A2MR-G ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds= 20V, Vgs= 0V - - 10 A Gate-Source Leak Current Igss Vgs= 12V, Vds= 0V - - 10 A Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 0.7 - 1.4 V Id= 0.5A, Vgs= 4.5V - 0.075 0.1 Drain-Source On-State Resistance *1 Rds(on) Id= 0.5A, Vgs= 2.5V - 0.120 0.160 Forward Transfer Admittance *1 Yfs Id= 0.5A, Vds= 10V - 3.3 - S Body Drain Diode Vf If= 1A, Vgs= 0V - 0.8 1.1 V Forward Voltage *1 Effective during pulse test. Dynamic Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Input Capacitance Ciss - 180 - pF Vds= 10V, Vgs=0V Output Capacitance Coss - 120 - pF f= 1MHz Feedback Capacitance Crss - 45 - pF Switching Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Turn-On Delay Time td (on) - 10 - ns Rise Time tr - 15 - ns Vgs= 5V, Id= 0.5A Vdd= 10V Turn-Off Delay Time td (off) - 50 - ns Fall Time tf - 45 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance Rth (ch-a) Implement on a ceramic PCB - 250 - /W (Channel-Ambience) 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
TOREX
Torex Semicon
Torex Semiconductor Ltd

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted