XP151A12A2MR-G ETR1118 003 Power MOSFET GENERAL DESCRIPTION The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. FEATURES APPLICATIONS Low On-State Resistance : Rds(on) = 0.1 Vgs = 4.5V Notebook PCs : Rds(on) = 0.16 Vgs = 2.5V Cellular and portable phones Ultra High-Speed Switching Gate Protect Diode Built-in On-board power supplies Driving Voltage : 2.5V Li-ion battery systems N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free PIN CONFIGURATION/ MARKING PRODUCT NAMES PRODUCTS PACKAGE ORDER UNIT XP151A12A2MR SOT-23 3,000/Reel 1 1 2 x GGate (*) SSource XP151A12A2MR-G SOT-23 3,000/Reel DDrain (*) The -G suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. * x represents production lot number. ABSOLUTE MAXIMUM RATINGS EQUIVALENT CIRCUIT Ta = 25 PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss 20 V Gate - Source Voltage Vgss 12 V Drain Current (DC) Id 1 A Drain Current (Pulse) Idp 4 A Reverse Drain Current Idr 1 A Channel Power Dissipation * Pd 0.5 W Channel Temperature Tch 150 Storage Temperature Tstg -55~150 * When implemented on a ceramic PCB 1/5 XP151A12A2MR-G ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds= 20V, Vgs= 0V - - 10 A Gate-Source Leak Current Igss Vgs= 12V, Vds= 0V - - 10 A Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 0.7 - 1.4 V Id= 0.5A, Vgs= 4.5V - 0.075 0.1 Drain-Source On-State Resistance *1 Rds(on) Id= 0.5A, Vgs= 2.5V - 0.120 0.160 Forward Transfer Admittance *1 Yfs Id= 0.5A, Vds= 10V - 3.3 - S Body Drain Diode Vf If= 1A, Vgs= 0V - 0.8 1.1 V Forward Voltage *1 Effective during pulse test. Dynamic Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Input Capacitance Ciss - 180 - pF Vds= 10V, Vgs=0V Output Capacitance Coss - 120 - pF f= 1MHz Feedback Capacitance Crss - 45 - pF Switching Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Turn-On Delay Time td (on) - 10 - ns Rise Time tr - 15 - ns Vgs= 5V, Id= 0.5A Vdd= 10V Turn-Off Delay Time td (off) - 50 - ns Fall Time tf - 45 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance Rth (ch-a) Implement on a ceramic PCB - 250 - /W (Channel-Ambience) 2/5