XP161A1355PR-G Torex Semiconductor

XP161A1355PR-G ETR1124 003 Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. FEATURES APPLICATIONS Low On-State Resistance : Rds (on)= 0.05 Vgs = 4.5V Notebook PCs : Rds (on)= 0.07 Vgs = 2.5V Cellular and portable phones : Rds (on)= 0.15 Vgs = 1.5V Ultra High-Speed Switching On-board power supplies Gate Protect Diode Built-in Li-ion battery systems Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-89 Environmentally Friendly : EU RoHS Compliant, Pb Free PIN CONFIGURATION/ PRODUCT NAME MARKING PRODUCT NAME PACKAGE ORDER UNIT XP161A1355PR SOT-89 1,000/Reel (*) XP161A1355PR-G SOT-89 1,000/Reel G : Gate (*) The -G suffix denotes Halogen and Antimony free as well as S : Source being fully RoHS compliant. D : Drain * x represents production lot number. ABSOLUTE MAXIMUM RATINGS Ta = 25 PARAMETER SYMBOL RATINGS UNITS EQUIVALENT CIRCUIT Drain-Source Voltage Vdss 20 V Gate-Source Voltage Vgss 8 V Drain Current (DC) Id 4 A Drain Current (Pulse) Idp 16 A Reverse Drain Current Idr 4 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 Tstg -55~150 Storage Temperature * When implemented on a ceramic PCB 1/5 1 1 3 x XP161A1355PR-G ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds=20V, Vgs= 0V - - 10 A Gate-Source Leak Current Igss Vgs= 8V, Vds= 0V - - 10 A Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 0.5 - 1.2 V Id= 2A, Vgs= 4.5V - 0.037 0.050 Drain-Source On-State Resistance *1 Rds(on) Id= 2A, Vgs= 2.5V - 0.05 0.07 Id= 0.5A, Vgs= 1.5V - 0.1 0.15 Forward Transfer Admittance *1 Yfs Id= 2A, Vds= 10V - 10 - S Body Drain Diode Vf If= 4A, Vgs= 0V - 0.85 1.1 V Forward Voltage *1 Effective during pulse test. Dynamic Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Input Capacitance Ciss - 390 - pF Vds= 10V, Vgs=0V Output Capacitance Coss - 210 - pF f= 1MHz Feedback Capacitance Crss - 90 - pF Switching Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Turn-On Delay Time td (on) - 10 - ns Rise Time tr - 15 - ns Vgs= 5V, Id=2A Vdd= 10V Turn-Off Delay Time td (off) - 85 - ns Fall Time tf - 45 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance Rth (ch-a) Implement on a ceramic PCB - 62.5 - /W (Channel-Ambience) 2/5