Product Information

1SS389,L3F(T

1SS389,L3F(T electronic component of Toshiba

Datasheet
Diode: Schottky rectifying; SMD; 15V; 0.1A; ESC; Package: Reel, tape
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

403: USD 0.0913 ea
Line Total: USD 36.79

15672 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 403  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
15672 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 403
Multiples : 1

Stock Image

1SS389,L3F(T
Toshiba

403 : USD 0.0913
500 : USD 0.0833
1000 : USD 0.0716
2000 : USD 0.0676
8000 : USD 0.0615
16000 : USD 0.0585

Read More Specifications

     
Manufacturer
Product Category
Mounting
Kind Of Package
Semiconductor Structure
Case
Type Of Diode
Max. Load Current
Max. Forward Impulse Current
Max. Forward Voltage
Load Current
Max. Off-State Voltage
Power Dissipation
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Additional Infomation About Product

1SS389 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application Unit: mm z Small package z Low forward voltage: V = 0.23V (typ.) I = 5mA F F Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P * 150 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 100 C opr JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-1G1A temperature/current/voltage and the significant change in Weight: 1.4mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.18 F (1) F Forward voltage V V I = 5mA 0.23 0.30 F (2) F V I = 100mA 0.35 0.50 F (3) F Reverse current I V = 10V 20 A R R Total capacitance CT VR = 0, f = 1MHz 20 40 pF Equivalent Circuit (Top View) Marking Start of commercial production 1994-11 1 2014-03-01 1SS389 2 2014-03-01

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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