Product Information

1SS394TE85LF

1SS394TE85LF electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers 0.1A 10V Schottky Small Sig Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1421 ea
Line Total: USD 1.14

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

1SS394TE85LF
Toshiba

1 : USD 1.1421
10 : USD 0.9555
100 : USD 0.2028
500 : USD 0.1337
1000 : USD 0.0914
3000 : USD 0.0702
9000 : USD 0.0602
24000 : USD 0.0568
45000 : USD 0.0501

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Ifsm - Forward Surge Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Maximum Diode Capacitance
Peak Reverse Voltage
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Unit: mm AEC-Q101 Qualified (Note1) Small package : SC-59 Low forward voltage : VF(2) = 0.23V (typ.) Note1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P 150 mW Junction temperature T 125 C j JEDEC TO-236MOD JEITA SC-59 Storage temperature range T 55 to 125 C stg TOSHIBA 2-3F1S Operating temperature range T 40 to 100 C opr Weight: 12 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.18 F (1) F Forward voltage V I = 5mA 0.23 0.30 V F (2) F V I = 100mA 0.35 0.50 F (3) F Reverse current I V = 10V 20 A R R Total capacitance C V = 0V, f = 1MH 20 40 pF T R z Marking Start of commercial production 1996-04 1 2017-10-30 1SS394 2 2017-10-30

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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