Product Information

1SS405,H3F(T

1SS405,H3F(T electronic component of Toshiba

Datasheet
Diode: Schottky rectifying; SMD; 20V; 50mA; SOD523; Ufmax:0.55V
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0359 ea
Line Total: USD 143.6

23280 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000

 More Buying Options & Price Grid(s)

Availability Price Quantity
23280 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 4000
Multiples : 4000

Stock Image

1SS405,H3F(T
Toshiba

4000 : USD 0.0359
28000 : USD 0.0355
40000 : USD 0.0351
60000 : USD 0.0345

9609 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 197
Multiples : 1

Stock Image

1SS405,H3F(T
Toshiba

197 : USD 0.1942
212 : USD 0.1804
500 : USD 0.1591
1000 : USD 0.1528
2000 : USD 0.144
4000 : USD 0.1422

Read More Specifications

     
Manufacturer
Product Category
Kind Of Package
Semiconductor Structure
Mounting
Case
Type Of Diode
Max Forward Voltage
Max Forward Impulse Current
Max Off-State Voltage
Load Current
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Additional Infomation About Product

1SS405 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS405 Unit: mm High Speed Switching Application z Low forward voltage : V = 0.50V (typ.) F (3) z Low reverse current : I = 0.5A (max) R z Small total capacitance : C = 3.9pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 25 V RM Reverse voltage V 20 V R Maximum (peak) forward current I 100 mA FM Average forward current I 50 mA O Surge current (10ms) I 1 A FSM Power dissipation P * 150 mW JEDEC Junction temperature T 125 C j JEITA Storage temperature range T 55 to 125 C stg TOSHIBA 1-1G1A Weight: 1.4mg(Typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 20 mm, pad dimension of 4 4 mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.33 F (1) F Forward voltage V I = 5mA 0.38 F (2) F V V I = 50mA 0.50 0.55 F (3) F Reverse current I V = 20V 0.5 R R A Total capacitance C V = 0, f = 1MH 3.9 T R z pF Equivalent Circuit (Top View) Marking A7 Start of commercial production 2001-09 2014-03-01 11SS405 2014-03-01 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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