Product Information

1SS416CT(TPL3)

1SS416CT(TPL3) electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers Hi-Speed 30V 100mA
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0508 ea
Line Total: USD 508

0 - Global Stock
MOQ: 10000  Multiples: 10000
Pack Size: 10000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 10000
Multiples : 10000
10000 : USD 0.0508
20000 : USD 0.0498
50000 : USD 0.0498
100000 : USD 0.0498

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application 0.60.05 z Small package z Low forward voltage: V = 0.23 V (typ.) I = 5 mA F F Absolute Maximum Ratings (Ta = 25C) 0.50.03 +0.02 Characteristics Symbol Rating Unit 0.050.03 0.38 -0.03 Maximum (peak) reverse Voltage V 35 V RM Reverse voltage V 30 V R Maximum (peak) forward current I 200 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P * 100 mW CST2 Junction temperature T 125 C j JEDEC Storage temperature range T 55 to 125 C stg JEITA Operating temperature range T 40 to 100 C opr TOSHIBA 1-1P1A Weight: 0.7 mg (typ.) *: Mounted on a glass epoxy circuit board of 20 mm 20 mm, pad dimension of 4 mm 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.18 F (1) F Forward voltage V V I = 5 mA 0.23 F (2) F V I = 100 mA 0.38 0.50 F (3) F I V = 10 V 20 R(1) R Reverse current A I V = 30 V 50 R(2) R Total capacitance C V = 0 V, f = 1 MHz 15 pF T R Start of commercial production 2005-03 1 2014-03-01 CATHODE MARK 1.00.05 0.250.03 0.250.03 0.65 0.050.031SS416CT Marking Equivalent Circuit (top view) W 2 2014-03-01

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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