Product Information

1SS422(TE85L,F)

1SS422(TE85L,F) electronic component of Toshiba

Datasheet
Diode Array 1 Pair Series Connection Schottky 30 V 100mA Surface Mount SC-75, SOT-416
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

209: USD 0.1836 ea
Line Total: USD 38.37

48192 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 209  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
48192 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 209
Multiples : 1
209 : USD 0.1836
500 : USD 0.1605
1000 : USD 0.153
2000 : USD 0.1518
3000 : USD 0.1468
6000 : USD 0.1394

2565 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 286
Multiples : 1
286 : USD 0.3227
500 : USD 0.3161

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Max Surge Current
Configuration
Packaging
Brand
Forward Voltage Drop
Operating Temperature Range
Operating Temp Range
Package Type
Pin Count
Rad Hardened
Peak Rep Rev Volt
Rev Curr
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Additional Infomation About Product

1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm Low forward voltage V = 0.23 V (typ.) I = 5 mA F F Small package suitable for mounting on a small space Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage V 35 V RM Reverse voltage V 30 V R Maximum (peak) forward current I 200* mA FM Average forward current I 100* mA O Surge current (10 ms) I 1* A FSM Power dissipation P 100* mW 1.ANODE1 2.CATHODE2 Junction temperature T 125 C j 3.CATHODE1 Storage temperature range T 55 to 125 C stg ANODE2 Operating temperature range T 40 to 100 C opr Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-2S1C reliability significantly even if the operating conditions (i.e. operating Weight: 0.0024 g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: This is the absolute maximum rating for a single diode. Where two diodes are used, the absolute maximum rating per diode is 75% that for the single diode. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 1 mA 0.18 F (1) F Forward voltage V I = 5 mA 0.23 F (2) F V V I = 100 mA 0.38 0.5 F (3) F I V = 10 V 20 R (1) R Reverse current A I V = 30 V 50 R (2) R Total capacitance C V = 0, f = 1 MHz 15 T R pF (between Cathode and Anode) Marking U9 Start of commercial production 2004-04 1 2014-03-01 1SS422 IF - VF IR - VR 100 100m 101m00 Ta = 100C Ta = 100C 75 75 100 100u 50 10 10m 50 25 10 25 10u 0 25 0 1m1 1 1u 25 100n 0 0.1 100u 100n 0.010u1 1n 0 0 0.1 0.2 0.3 0.4 0.5 0 102030 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT - VR 100 Ta = 25C f = 1MHz 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 2 2014-03-01 FORWARD CURRENT IF (A) TOTAL CAPACITANCE CT (pF) REVERSE CURRENT IR (A)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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