1SS422(TE85L,F) Toshiba

1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm Low forward voltage V = 0.23 V (typ.) I = 5 mA F F Small package suitable for mounting on a small space Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage V 35 V RM Reverse voltage V 30 V R Maximum (peak) forward current I 200* mA FM Average forward current I 100* mA O Surge current (10 ms) I 1* A FSM Power dissipation P 100* mW 1.ANODE1 2.CATHODE2 Junction temperature T 125 C j 3.CATHODE1 Storage temperature range T 55 to 125 C stg ANODE2 Operating temperature range T 40 to 100 C opr Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-2S1C reliability significantly even if the operating conditions (i.e. operating Weight: 0.0024 g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: This is the absolute maximum rating for a single diode. Where two diodes are used, the absolute maximum rating per diode is 75% that for the single diode. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 1 mA 0.18 F (1) F Forward voltage V I = 5 mA 0.23 F (2) F V V I = 100 mA 0.38 0.5 F (3) F I V = 10 V 20 R (1) R Reverse current A I V = 30 V 50 R (2) R Total capacitance C V = 0, f = 1 MHz 15 T R pF (between Cathode and Anode) Marking U9 Start of commercial production 2004-04 1 2014-03-01 1SS422 IF - VF IR - VR 100 100m 101m00 Ta = 100C Ta = 100C 75 75 100 100u 50 10 10m 50 25 10 25 10u 0 25 0 1m1 1 1u 25 100n 0 0.1 100u 100n 0.010u1 1n 0 0 0.1 0.2 0.3 0.4 0.5 0 102030 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) CT - VR 100 Ta = 25C f = 1MHz 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 2 2014-03-01 FORWARD CURRENT IF (A) TOTAL CAPACITANCE CT (pF) REVERSE CURRENT IR (A)