X-On Electronics has gained recognition as a prominent supplier of 2SA2154CT-GR,L3F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2154CT-GR,L3F Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2154CT-GR,L3F Toshiba

2SA2154CT-GR,L3F electronic component of Toshiba
2SA2154CT-GR,L3F Toshiba
2SA2154CT-GR,L3F Bipolar Transistors - BJT
2SA2154CT-GR,L3F  Semiconductors

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See Product Specifications
Part No. 2SA2154CT-GR,L3F
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Datasheet: 2SA2154CT-GR,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.275 ea
Line Total: USD 0.28 
Availability - 38382
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
38382
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 0.275
10 : USD 0.1675
100 : USD 0.1008
500 : USD 0.0713
1000 : USD 0.0539
5000 : USD 0.0473
10000 : USD 0.0396

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA2154CT-GR,L3F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2154CT-GR,L3F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : V = 50V, I = 100mA (max) CEO C Unit: mm Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026CT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Base current I 30 mA B Collector power dissipation P 100* mW C Junction temperature T 150 C j 1.BASE 2.EMITTER Storage temperature range T 55 to 150 C stg CST3 3.COLLECTOR * : Mounted on FR4 board (10 mm 10 mm 1 mmt) Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1J1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.75 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 A 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 A 0.1 A EBO EB C DC current gain h (Note) V = 6 V, I = 2 mA 120 400 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.18 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 1 mA 80 MHz T CE C Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 1.6 pF ob CB E Note: h classification Y (F): 120 to 240, GR (H): 200 to 400 FE ( ) marking symbol Marking Type Name h Rank FE 1 3 8F 2 Start of commercial production 2004-08 2020 1 2020-04-01 Toshiba Electronic Devices & Storage Corporation 2SA2154CT hFE - IC IC - VCE I V h I C CE FE C 1000 -120 CCOomMMOmon Nem EittMIer TT TEa R= 25Ta=C 25 -2.0 -100 -1.5 Ta = 100 25 -1.0 -80 -0.7 -60 100 -0.5 -25 -0.3 -40 COMMON EMITTER Common emitter -0.2 VVCCE E== 66V V -20 VCE = 1 V VCE=1V I = 0.1 mA IBB = -0.1mA -00 10 0 -0 -1 -2 -3 -4 -5 -6 -7 -0.1 -1 -10 -100 Collector-emitter voltage V (V) Collector current I (mA) COLLECTOR-EMITTER VOLTAGCEE VCE (V) C COLLECTOR CURRENT IC (mA) V I VCCEE(s (saatt)) - ICC V I VBE(sBE (asta) t)- ICC -1 -10 CCoOmmoMMOn emN EittMIer TTER Common emitter IC/IB = 10 COMMON EMITTER IC/IB=10 IC/IB = 10 IC/IB=10 -0.1 -1 Ta = 100 25 -25 -0.01 -0.1 -0.1 -1 -10 -100 -0.1 -1 -10 -100 Collector current I (mA) Collector current I (mA) C C COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) IB I -VBE V B BE P * T C a PC- Ta -1000 150 140 Mounted on FR4 board 130 (10 mm 10 mm 1 mmt) 120 -100 110 100 Ta = 100 -25 90 80 -10 25 70 60 50 40 -1 30 Common emitter COMMON EMITTER 20 V = 6 V CE VCE=6V 10 0 -0.1 0 0 20 40 60 80 100 120 140 160 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Ambient temperature T (C) a Base-emitter voltage V (V) AMBIENT TEMPERATURE Ta (C) BE BASE-EMITTER VOLTAGE VBE (V) * total rating The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2020 2 2020-04-01 Toshiba Electronic Devices & Storage Corporation COCLolLlEecCTtorO-emR-EitMterIT sTaEturR SatiAon vTURAoltagTIeO N COLLECTOR CURRENT IC (mA) Base current I (A) BASE CURREMTB IB (A) V (V) CE (sat) VOLTAGE VCE(sat) (V) Collector current I (mA) C BASE-Base-EMemiITtterTER sat SATuration vURAToltIageON DC CURRENT GAIN hFE COLLECColTlOecRtor PO powWERer d DisIsSSIipatPATion I OPN PC (m V) (m V) C DC current gain h V (V) FE BE (sat) VOLTAGE VBE(sat) (V)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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