X-On Electronics has gained recognition as a prominent supplier of 2SC5886A(T6L1,NQ) Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. 2SC5886A(T6L1,NQ) Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

2SC5886A(T6L1,NQ) Toshiba

2SC5886A(T6L1,NQ) electronic component of Toshiba
2SC5886A(T6L1,NQ) Toshiba
2SC5886A(T6L1,NQ) Bipolar Transistors - Pre-Biased
2SC5886A(T6L1,NQ)  Semiconductors

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See Product Specifications
Part No. 2SC5886A(T6L1,NQ)
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Trans GP BJT NPN 50V 5A 3-Pin(2+Tab) PW-Mold T/R
Datasheet: 2SC5886A(T6L1,NQ) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4379 ea
Line Total: USD 2.19 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Fri. 11 Jul to Wed. 16 Jul
MOQ : 5
Multiples : 5
5 : USD 0.4379
50 : USD 0.3563
150 : USD 0.3212
500 : USD 0.2783
2000 : USD 0.2588
4000 : USD 0.2472

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 63
Multiples : 1
63 : USD 0.5839
100 : USD 0.5115

   
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We are delighted to provide the 2SC5886A(T6L1,NQ) from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5886A(T6L1,NQ) and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit: mm DC/DC Converter Applications High DC current gain: h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation: V = 0.22 V (max) CE (sat) High-speed switching: t = 95 ns (typ.) f Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 120 V CBO V 100 CEX Collector-emitter voltage V V 50 CEO Emitter-base voltage V 9 V EBO DC I 5 C Collector current A Pulse I 10 CP Base current I 0.5 A B JEDEC Ta = 25C 1 Collector power JEITA Pc W dissipation Tc = 25C 20 TOSHIBA 2-7J1A Junction temperature T 150 C j Weight: 0.36 g (typ.) Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2004-05 1 2013-11-01 2SC5886A Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit Collector cutoff current I V = 120 V, I = 0 100 nA CBO CB E Emitter cutoff current I V = 9 V, I = 0 100 nA EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 50 V (BR) CEO C B h (1) V = 2 V, I = 0.5 A 400 1000 FE CE C DC current gain h (2) V = 2 V, I = 1.6 A 200 FE CE C Collector-emitter saturation voltage V I = 1.6 A, I = 32 mA 0.22 V CE (sat) C B Base-emitter saturation voltage V I = 1.6 A, I = 32 mA 1.10 V BE (sat) C B Rise time t 60 r See Figure 1. Switching time Storage time t V 24 V, R = 15 500 ns stg CC L I = 32 mA, I = 53 mA B1 B2 Fall time t 95 f V CC 20 s I I B1 B1 Output Input I B2 I B2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart Marking C5886A Part No. (or abbreviation code) Lot No. Note 1 Note 1: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 R L

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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