2SK209-GR(TE85L,F) Toshiba

2SK209-GR(TE85L,F) electronic component of Toshiba
2SK209-GR(TE85L,F) Toshiba
2SK209-GR(TE85L,F) JFET
2SK209-GR(TE85L,F)  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SK209-GR(TE85L,F) JFET across the USA, India, Europe, Australia, and various other global locations. 2SK209-GR(TE85L,F) JFET are a product manufactured by Toshiba. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

Part No. 2SK209-GR(TE85L,F)
Manufacturer: Toshiba
Category: JFET
Description: JFET N-Ch Junction FET 10mA -50V VGDS
Datasheet: 2SK209-GR(TE85L,F) Datasheet (PDF)
Price (USD)
5: USD 0.2506 ea
Line Total: USD 1.25 
Availability : 97
  
Ship by Fri. 15 Aug to Wed. 20 Aug
QtyUnit Price
5$ 0.2506
50$ 0.195
150$ 0.1283
500$ 0.0954
3000$ 0.0883
6000$ 0.0829

Availability 97
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2506
50$ 0.195
150$ 0.1283
500$ 0.0954
3000$ 0.0883
6000$ 0.0829


Availability 833
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7
10$ 0.5348
50$ 0.413
56$ 0.3416
152$ 0.3234


Availability 53817
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 717
Multiples : 1
QtyUnit Price
717$ 0.3627
953$ 0.273
1143$ 0.2275
3000$ 0.1862
6000$ 0.1763
12000$ 0.1487
24000$ 0.1438


Availability 2910
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.6493


Availability 128040
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 6000
Multiples : 6000
QtyUnit Price
6000$ 0.1911
9000$ 0.1886


Availability 2910
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 829
Multiples : 1
QtyUnit Price
829$ 0.3138
860$ 0.3025
1000$ 0.2926
2500$ 0.273


Availability 1444
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 386
Multiples : 1
QtyUnit Price
386$ 0.6752

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Series
Type
Brand
Gate-Source Cutoff Voltage
Cnhts
Hts Code
Maximum Drain Gate Voltage
Mxhts
Factory Pack Quantity :
Taric
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SK209-GR(TE85L,F) from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK209-GR(TE85L,F) and other electronic components in the JFET category and beyond.

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2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High Y : Y = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = 50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = 1 nA (max) at V = 30 V GSS GS Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 150 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC TO-236 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA SC-59 absolute maximum ratings. TOSHIBA 2-3F1B Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.012 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 1.2 14.0 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.2 1.5 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 4.0 15 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 13 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 3 pF rss DG D V = 10 V, R = 1 k DS G Noise figure NF (1) 5 dB I = 0.5 mA, f = 10 Hz D V = 10 V, R = 1 k DS G Noise figure NF (2) 1 dB I = 0.5 mA, f = 1 kHz D Note: I classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA DSS Marking Start of commercial production 1981-06 1 2014-03-01 2SK209 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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