2SK209-GR(TE85L,F) Toshiba

2SK209-GR(TE85L,F) electronic component of Toshiba
2SK209-GR(TE85L,F) Toshiba
2SK209-GR(TE85L,F) JFET
2SK209-GR(TE85L,F)  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SK209-GR(TE85L,F) JFET across the USA, India, Europe, Australia, and various other global locations. 2SK209-GR(TE85L,F) JFET are a product manufactured by Toshiba. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

Part No. 2SK209-GR(TE85L,F)
Manufacturer: Toshiba
Category: JFET
Description: JFET N-Ch Junction FET 10mA -50V VGDS
Datasheet: 2SK209-GR(TE85L,F) Datasheet (PDF)
Price (USD)
5: USD 0.2692 ea
Line Total: USD 1.35 
Availability : 8211
  
Ship by Thu. 20 Nov to Wed. 26 Nov
QtyUnit Price
5$ 0.2692
50$ 0.2094
150$ 0.1378
500$ 0.1024
3000$ 0.0948
6000$ 0.089

Availability 8211
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2692
50$ 0.2094
150$ 0.1378
500$ 0.1024
3000$ 0.0948
6000$ 0.089


Availability 488
Ship by Tue. 18 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.686
10$ 0.5782
50$ 0.4382
56$ 0.3444
153$ 0.3262


Availability 50703
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 412
Multiples : 1
QtyUnit Price
412$ 0.6318
558$ 0.4667
1000$ 0.3289
3000$ 0.315
6000$ 0.2362
12000$ 0.2012
24000$ 0.1675


Availability 128040
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 6000
Multiples : 6000
QtyUnit Price
6000$ 0.1875
9000$ 0.1826


Availability 2910
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 730
Multiples : 1
QtyUnit Price
730$ 0.3566
757$ 0.3437
1000$ 0.3325
2500$ 0.3103


Availability 1444
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 817
Multiples : 1
QtyUnit Price
817$ 0.3185

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Series
Type
Brand
Gate-Source Cutoff Voltage
Cnhts
Hts Code
Maximum Drain Gate Voltage
Mxhts
Factory Pack Quantity :
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SK209-GR(TE85L,F) from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK209-GR(TE85L,F) and other electronic components in the JFET category and beyond.

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2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High Y : Y = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = 50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = 1 nA (max) at V = 30 V GSS GS Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 150 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC TO-236 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA SC-59 absolute maximum ratings. TOSHIBA 2-3F1B Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.012 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 1.2 14.0 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.2 1.5 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 4.0 15 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 13 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 3 pF rss DG D V = 10 V, R = 1 k DS G Noise figure NF (1) 5 dB I = 0.5 mA, f = 10 Hz D V = 10 V, R = 1 k DS G Noise figure NF (2) 1 dB I = 0.5 mA, f = 1 kHz D Note: I classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA DSS Marking Start of commercial production 1981-06 1 2014-03-01 2SK209 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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