2SK209-GR(TE85L,F) Toshiba

2SK209-GR(TE85L,F) electronic component of Toshiba
2SK209-GR(TE85L,F) Toshiba
2SK209-GR(TE85L,F) JFETs
2SK209-GR(TE85L,F)  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of 2SK209-GR(TE85L,F) JFETs across the USA, India, Europe, Australia, and various other global locations. 2SK209-GR(TE85L,F) JFETs are a product manufactured by Toshiba. We provide cost-effective solutions for JFETs, ensuring timely deliveries around the world.

Part No.2SK209-GR(TE85L,F)
Manufacturer:Toshiba
Category:JFETs
Description:JFET N-Ch Junction FET 10mA -50V VGDS
Datasheet:2SK209-GR(TE85L,F) Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
5: USD 0.2476 ea
Line Total: USD 1.24 
Availability : 27887
  
Ship by Tue. 23 Jun to Mon. 29 Jun
QtyUnit Price
5$ 0.2476
50$ 0.1934
150$ 0.1247
500$ 0.0986
3000$ 0.0894
6000$ 0.0839
  

Availability27887
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2476
50$ 0.1934
150$ 0.1247
500$ 0.0986
3000$ 0.0894
6000$ 0.0839


Availability2283
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.924
10$ 0.6776
50$ 0.476
56$ 0.3458
152$ 0.3276


Availability41818
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 479
Multiples : 1
QtyUnit Price
479$ 0.5434
728$ 0.3573
939$ 0.2771
1072$ 0.2427
3000$ 0.199
6000$ 0.182
9000$ 0.1623


Availability1286
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 829
Multiples : 1
QtyUnit Price
829$ 0.3138
860$ 0.3025
1000$ 0.2926


Availability2910
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.882


Availability104760
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 6000
Multiples : 6000
QtyUnit Price
6000$ 0.1919


Availability921
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 829
Multiples : 1
QtyUnit Price
829$ 0.3138
860$ 0.3025

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Series
Type
Brand
Gate-Source Cutoff Voltage
Cnhts
Hts Code
Maximum Drain Gate Voltage
Mxhts
Factory Pack Quantity :
Taric
Brand Category
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We are delighted to provide the 2SK209-GR(TE85L,F) from our JFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK209-GR(TE85L,F) and other electronic components in the JFETs category and beyond.

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2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High Y : Y = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = 50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = 1 nA (max) at V = 30 V GSS GS Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 150 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC TO-236 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA SC-59 absolute maximum ratings. TOSHIBA 2-3F1B Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.012 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 1.2 14.0 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.2 1.5 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 4.0 15 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 13 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 3 pF rss DG D V = 10 V, R = 1 k DS G Noise figure NF (1) 5 dB I = 0.5 mA, f = 10 Hz D V = 10 V, R = 1 k DS G Noise figure NF (2) 1 dB I = 0.5 mA, f = 1 kHz D Note: I classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA DSS Marking Start of commercial production 1981-06 1 2014-03-01 2SK209 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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