Product Information

2SK3078A(TE12L,F)

Product Image X-ON

Datasheet
RF MOSFET Transistors N-Ch Radio Freq 0.5 3W 10V VDSS

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.967 ea
Line Total: USD 1.967

67 - Global Stock
Ships to you between
Thu. 15 Jun to Mon. 19 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1042 - Global Stock


Ships to you between Thu. 15 Jun to Mon. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 1.6605
10 : USD 1.443
25 : USD 1.3125
100 : USD 1.1025
500 : USD 0.8868
1000 : USD 0.7272
2000 : USD 0.6744
5000 : USD 0.6516

     
Manufacturer
Toshiba
Product Category
RF MOSFET Transistors
RoHS - XON
Y Icon ROHS
Transistor Polarity
N - Channel
Technology
Si
Id - Continuous Drain Current
0.5 A
Vds - Drain-Source Breakdown Voltage
10 V
Operating Frequency
470 MHz
Gain
8 Db
Configuration
Single
Pd - Power Dissipation
3 W
Mounting Style
Smd/Smt
Package / Case
PW - M in I - 3
Packaging
Reel
Vgs - Gate-Source Voltage
5 V
Series
2Sk3078
Type
Rf Power Mosfet
Brand
Toshiba
Factory Pack Quantity :
1000
Vgs - Gate-Source Breakdown Voltage
5 V
Vgs Th - Gate-Source Threshold Voltage
1.2 V
Cnhts
8541290000
Hts Code
8541290095
Mxhts
85412999
Product Type
Rf Mosfet Transistors
Subcategory
Mosfets
Taric
8541290000
Brand Category
Toshiba
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2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: P 28.0dBmW o Gain: G 8.0dB p Drain Efficiency: D 50% Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 10 V DSS Gate-source voltage V 5 V GSS Drain current I 0.5 A D Power dissipation P (Note 1) 3 W D JEDEC Channel temperature T 150 C ch Storage temperature range T 45 to 150 C JEITA SC-62 stg TOSHIBA 2-5K1D Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.05 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tc = 25C Marking Part No. (or abbreviation code) Note 2: A line beside a Lot No. identifies the indication of product Labels. U W Without a line: Pb /INCLUDES > MCV With a line: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental Note 2 matters such as the RoHS compatibility of Product. The RoHS is the Directive Lot No. 1 2 3 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic 1. Gate equipment. 2. Source 3. Drain Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. Start of commercial production 2000-05 1 2014-03-01 2SK3078A Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Output power P 28.0 dBmW O V = 4.5 V, Iidle = 50 mA DS (V = adjust) GS Drain efficiency D 50 % f = 470 MHz, P = 20dBmW i Power gain G 8.0 dB Z = Z = 50 p G L Threshold voltage V V = 4.8 V, I = 0.5 mA 0.20 1.20 V th DS D Drain cut-off current I V = 10 V, V = 0 V 10 A DSS DS GS Gate-source leakage current I V = 5 V, V = 0 V 5 A GSS GS DS V = 6.5 V, f = 470 MHz, DS P = 20dBmW, i Load mismatch (Note 3) No degradation P = 28.0dBmW (V = adjust) o GS VSWR LOAD 10:1 all phase Note 3: These characteristic values are measured using measurement tools specified by Toshiba. PF Output Power Test Fixture Line: 2 mm L1: 0.6, 5.5ID, 5T L2: 0.6, 5.5ID, 7T 2 56 9 2200 pF 7 2200 pF 2200 pF 5 20 1 33 7 29 3 29 5 L1 L2 7 pF 10 pF 5 pF 5 pF 5 pF 10000 pF 10000 pF 6.8 k V V GS DS 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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