2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: P 28.0dBmW o Gain: G 8.0dB p Drain Efficiency: D 50% Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 10 V DSS Gate-source voltage V 5 V GSS Drain current I 0.5 A D Power dissipation P (Note 1) 3 W D JEDEC Channel temperature T 150 C ch Storage temperature range T 45 to 150 C JEITA SC-62 stg TOSHIBA 2-5K1D Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.05 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tc = 25C Marking Part No. (or abbreviation code) Note 2: A line beside a Lot No. identifies the indication of product Labels. U W Without a line: Pb /INCLUDES > MCV With a line: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental Note 2 matters such as the RoHS compatibility of Product. The RoHS is the Directive Lot No. 1 2 3 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic 1. Gate equipment. 2. Source 3. Drain Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. Start of commercial production 2000-05 1 2014-03-01 2SK3078A Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Output power P 28.0 dBmW O V = 4.5 V, Iidle = 50 mA DS (V = adjust) GS Drain efficiency D 50 % f = 470 MHz, P = 20dBmW i Power gain G 8.0 dB Z = Z = 50 p G L Threshold voltage V V = 4.8 V, I = 0.5 mA 0.20 1.20 V th DS D Drain cut-off current I V = 10 V, V = 0 V 10 A DSS DS GS Gate-source leakage current I V = 5 V, V = 0 V 5 A GSS GS DS V = 6.5 V, f = 470 MHz, DS P = 20dBmW, i Load mismatch (Note 3) No degradation P = 28.0dBmW (V = adjust) o GS VSWR LOAD 10:1 all phase Note 3: These characteristic values are measured using measurement tools specified by Toshiba. PF Output Power Test Fixture Line: 2 mm L1: 0.6, 5.5ID, 5T L2: 0.6, 5.5ID, 7T 2 56 9 2200 pF 7 2200 pF 2200 pF 5 20 1 33 7 29 3 29 5 L1 L2 7 pF 10 pF 5 pF 5 pF 5 pF 10000 pF 10000 pF 6.8 k V V GS DS 2 2014-03-01