Product Information

2SK3475(TE12L,F)

2SK3475(TE12L,F) electronic component of Toshiba

Datasheet
RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.52 ea
Line Total: USD 2.52

108 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
101 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 2.47
5 : USD 2.223
8 : USD 2.145
21 : USD 2.028
100 : USD 2.002

Read More Specifications

     
Manufacturer
Product Category
Output Power
Kind Of Transistor
Kind Of Package
Case
Polarisation
Electrical Mounting
Kind Of Channel
Type Of Transistor
Open-Loop Gain
Drain-Source Voltage
Drain Current
Gate-Source Voltage
Efficiency
Frequency
Power Dissipation
Brand Category
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Additional Infomation About Product

The 2SK3475(TE12L,F) is a radio frequency (RF) metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Toshiba, featuring an N-channel in an LFPAK package. It has a maximum drain-source voltage of 20V and a maximum drain current of 1A. It has a maximum power dissipation of 3W and an on resistance of 2.3O. The product is optimized for high-frequency applications, offering a frequency range up to 2.6GHz and full-power bandwidth of 300MHz. It also has an improved thermal resistance package, allowing for easier heat dissipation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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