2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: P = 630 mW (min) O Gain: G = 14.9dB (min) P Drain efficiency: = 45% (min) D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gain-source voltage V 10 V GSS Drain current I 1 A D Power dissipation P (Note 1) 3 W D JEDEC Channel temperature T 150 C ch JEITA SC-62 Storage temperature range T 45~150 C stg TOSHIBA 2-5K1D Note 1: Tc = 25C (When mounted on a 1.6 mm glass epoxy PCB) Marking Part No. (or abbreviation code) W B A line indicates lead (Pb)-free package or Lot No. 1 23 lead (Pb)-free finish. 1. Gate 2. Source 3. Drain Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 1 2007-2-19 2SK3475 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Drain cut-off current I V = 20 V, V = 0 V 5 A DSS DS GS Gate-source leakage current I V = 10 V 5 A GSS GS Threshold voltage V V = 7.2 V, I = 2 mA 1.9 2.4 2.9 V th DS D Drain-source on-voltage V V = 10 V, I = 75 mA 87 mV DS (ON) GS D Forward transconductance Y V = 7.2 V, I = 208 mA 260 mS fs DS DS Input capacitance C V = 7.2 V, V = 0 V, f = 1 MHz 11 pF iss DS GS Output capacitance C V = 7.2 V, V = 0 V, f = 1 MHz 12.5 pF oss DS GS Output power P 630 mW O V = 7.2 V, DS Drain efficiency 45 I = 50 mA (V = adjust), % D idle GS f = 520 MHz, P = 20 mW, i Power gain G 14.9 dB P V = 6.0 V, DS Low voltage output power P I = 50 mA (V = adjust), 500 mW OL idle GS f = 520 MHz, P = 20 mW, i Note 2: These characteristic values are measured using measurement tools specified by Toshiba. Output Power Test Fixture (Test Condition: f = 520 MHz, V = 7.2 V, I = 50 mA, P = 20 mW) DS idle i C5 L1 L2 C6 P P i O C1 C2 L3 L4 C3 C4 Z = 50 Z = 50 G L C7 C8 C9 C10 R1 V V GS DS C1: 10 pF L1: 0.8 mm enamel wire, 2.2ID, 1T R1: 1.5 k C2: 10 pF L2: 0.8 mm enamel wire, 2.2ID, 1T C3: 9 pF L3: 0.8 mm enamel wire, 5.5ID, 4T C4: 6 pF L4: 0.8 mm enamel wire, 5.5ID, 8T C5: 2200 pF C6: 2200 pF C7: 10 F C8: 10000 pF C9: 10 F C10: 10000 pF 2 2007-2-19