Product Information

2SK3565(STA4,Q,M)

2SK3565(STA4,Q,M) electronic component of Toshiba

Datasheet
MOSFET N Trench 900V 5A 4V @ 1mA 2.5 Ω @ 3A,10V SC-67 RoHS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7326 ea
Line Total: USD 1.73

6971 - Global Stock
Ships to you between
Tue. 07 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
6971 - Global Stock


Ships to you between
Tue. 07 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 1.7103
10 : USD 1.4638
50 : USD 1.3079
100 : USD 1.1501
500 : USD 1.0772
1000 : USD 1.0455

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Transistor Type
Brand
Factory Pack Quantity :
Category
Brand Category
LoadingGif

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Additional Infomation About Product

The 2SK3565(STA4,Q,M) is a MOSFET manufactured by Toshiba. It is a N Trench 900V 5A 4V @ 1mA 2.5Ω @ 3A,10V SC-67 RoHS part. It has a maximum drain to source voltage of 900V, maximum continuous drain current of 5A, threshold voltage of 4V @ 1mA, on resistance of 2.5Ω @ 3A, and gate to source voltage of 10V. This device is RoHS compliant and is suitable for applications requiring high voltage and high current.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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