Product Information

4N25(SHORT)

4N25(SHORT) electronic component of Toshiba

Datasheet
OPTOCOUPLER, TRANSISTOR O/P

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6342 ea
Line Total: USD 1.63

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

4N25(SHORT)
Toshiba

1 : USD 2.1879
10 : USD 1.4447
25 : USD 1.1179
50 : USD 1.0405
100 : USD 0.9631
500 : USD 0.9096

     
Manufacturer
Product Category
Isolation Voltage
Brand
No. Of Channels
Optocoupler Case Style
No. Of Pins
Forward Current If Max
Ctr Min
Collector Emitter Voltage Vbrceo
Svhc
Input Current
Operating Temperature Max
Operating Temperature Min
Operating Temperature Range
Optocoupler Output Type
Output Voltage
LoadingGif

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4N25,4N25A,4N26,4N27,4N28(Short) TOSHIBA Photocoupler GaAs IRed & PhotoTransistor 4N25(Short),4N25A(Short),4N26(Short),4N27(Short),4N28(Short) AC Line / Digital Logic Isolator. Unit in mm Digital Logic / Digital Logic Isolator. Telephone Line Receiver. Twisted Pair Line Receiver High Frequency Power Supply Feedback Control. Relay Contact Monitor. The TOSHIBA 4N25 (Short) through 4N28 (Short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in line package. Switching speeds: 3s (typ.) DC current transfer ratio: 100% (typ.) 11 Isolation resistance: 10 (min.) Isolation voltage: 2500Vrms (min.) UL recognized: UL 1577, file No. E67349 TOSHIBA 11 7A8 Weight: 0.4g Pin Configurations (top view) 1 2002-09-25 4N25,4N25A,4N26,4N27,4N28(Short) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current (continuous) I 80 mA F Forward current derating I / C 1.07 (*) mA / C F Peak forward current (Note 1) I 3 A PF Power dissipation P 150 mW D Power dissipation derating P / C 2.0 (*) mW / C D Reverse voltage V 3 V R Collector emitter voltage BV 30 V CEO Collector base voltage BV 70 V CBO Emitter collector voltage BV 7 V ECO Collector current (continuous) I 100 mA C Power dissipation P 150 mW C Power dissipation derating P / C 2.0 (*) mW / C C Storage temperature range T 55~150 C stg Operating temperature range T 55~100 C opr Lead soldering temperature (10s) T 260 C sol Total package power dissipation P 250 mW T Total package power dissipation P / C 3.3 (*) mW / C T derating (Note 1) Pulse width 300s, 2% duty cycle. (*) Above 25C ambient. 2 2002-09-25 Coupled Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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