Product Information

4N35(SHORT,F)

4N35(SHORT,F) electronic component of Toshiba

Datasheet
Transistor Output Optocouplers TR HIGH CTR (SHORT)

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.3
10 : USD 0.8365
N/A

Obsolete
0 - WHS 2

MOQ : 5
Multiples : 1
5 : USD 0.5739
10 : USD 0.398
100 : USD 0.3422
500 : USD 0.3101
1000 : USD 0.2788
N/A

Obsolete
0 - WHS 3

MOQ : 50
Multiples : 50
50 : USD 0.3947
100 : USD 0.2617
1000 : USD 0.2023
2500 : USD 0.1809
10000 : USD 0.1809
25000 : USD 0.1809
50000 : USD 0.1785
100000 : USD 0.1716
N/A

Obsolete
0 - WHS 4

MOQ : 650
Multiples : 650
650 : USD 0.1962
N/A

Obsolete
     
Manufacturer
Product Category
Rise Time
Package / Case
Isolation Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
No. Of Channels
Optocoupler Case Style
No. Of Pins
Forward Current If Max
Ctr Min
Collector Emitter Voltage Vbrceo
Product Range
Svhc
Approval Bodies
Current Transfer Ratio Min
Current Transfer Ratio Typ
Fall Time Tf
Forward Current Ifav
Input Current
Operating Temperature Range
Optocoupler Output Type
Output Voltage
LoadingGif

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4N35,4N36,4N37(Short) TOSHIBA Photocoupler GaAs IRed & Photo Transistor 4N35(Short), 4N36(Short), 4N37(Short) AC Line / Digital Logic Isolator. Unit in mm Digital Logic / Digital Logic Isolator. Telephone Line Receiver. High Frequency Power Supply Feedback Control. Relay Contact Monitor. The TOSHIBA 4N35 (short) through 4N37 (short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in line package. Switching speeds: 3s (typ.) DC current transfer ratio: 100% (min.) 11 Isolation resistance: 10 (min.) Isolation voltage: 2500Vrms (min.) UL recognized: UL 1577, file no. E67349 TOSHIBA 11 7A8 Weight: 0.4 g Pin Configurations (top view) 1 2002-09-25 4N35,4N36,4N37(Short) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current (continuous) I 60 mA F Forward current derating I /C 0.8 (*) mA / C F Peak forward current (Note 1) I 3 A PF Power dissipation P 100 mW D Power dissipation derating P / C 1.33 (*) mW / C D Reverse voltage V 6 V R Collector emitter voltage BV 30 V CEO Collector base voltage BV 70 V CBO Emitter collector voltage BV 7 V ECO Collector current (continuous) I 100 mA C Power dissipation P 300 mW C Power dissipation derating P / C 4.0 (*) mW / C C Storage temperature T 55~150 C stg Operating temperature T 55~100 C opr Lead soldering temperature (at 10 s) T 260 C sol Total package power dissipation P 300 mW T Total package power dissipation P / C 3.3 (*) mW / C T derating BV 2500 Vrms S 4N35 2500 / 3550 Input to output isolation Vrms / voltage (AC, 1 minute) 4N36 BV (**) 1750 / 2500 S Vpk 4N37 1050 / 1500 (Note 1) Pulse width 1s, 300pps (*) Above 25C ambient. (**) JEDEC registered maximum BV , however, TOSHIBA specifies a maxium BV of 2500V , 1 minute. S S rms 2 2002-09-25 Coupled Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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