Product Information

4N36(SHORT,F)

4N36(SHORT,F) electronic component of Toshiba

Datasheet
Toshiba Transistor Output Optocouplers RECOMMEND 4N35SHORT

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 50
Multiples : 50
50 : USD 0.3792
100 : USD 0.2922
1000 : USD 0.2549
2500 : USD 0.2425
10000 : USD 0.2425
25000 : USD 0.2425
50000 : USD 0.2338
100000 : USD 0.2251
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Current Transfer Ratio
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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4N35,4N36,4N37(Short) TOSHIBA Photocoupler GaAs IRed & Photo Transistor 4N35(Short), 4N36(Short), 4N37(Short) AC Line / Digital Logic Isolator. Unit in mm Digital Logic / Digital Logic Isolator. Telephone Line Receiver. High Frequency Power Supply Feedback Control. Relay Contact Monitor. The TOSHIBA 4N35 (short) through 4N37 (short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in line package. Switching speeds: 3s (typ.) DC current transfer ratio: 100% (min.) 11 Isolation resistance: 10 (min.) Isolation voltage: 2500Vrms (min.) UL recognized: UL 1577, file no. E67349 TOSHIBA 11 7A8 Weight: 0.4 g Pin Configurations (top view) 1 2002-09-25 4N35,4N36,4N37(Short) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current (continuous) I 60 mA F Forward current derating I /C 0.8 (*) mA / C F Peak forward current (Note 1) I 3 A PF Power dissipation P 100 mW D Power dissipation derating P / C 1.33 (*) mW / C D Reverse voltage V 6 V R Collector emitter voltage BV 30 V CEO Collector base voltage BV 70 V CBO Emitter collector voltage BV 7 V ECO Collector current (continuous) I 100 mA C Power dissipation P 300 mW C Power dissipation derating P / C 4.0 (*) mW / C C Storage temperature T 55~150 C stg Operating temperature T 55~100 C opr Lead soldering temperature (at 10 s) T 260 C sol Total package power dissipation P 300 mW T Total package power dissipation P / C 3.3 (*) mW / C T derating BV 2500 Vrms S 4N35 2500 / 3550 Input to output isolation Vrms / voltage (AC, 1 minute) 4N36 BV (**) 1750 / 2500 S Vpk 4N37 1050 / 1500 (Note 1) Pulse width 1s, 300pps (*) Above 25C ambient. (**) JEDEC registered maximum BV , however, TOSHIBA specifies a maxium BV of 2500V , 1 minute. S S rms 2 2002-09-25 Coupled Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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