Product Information

BAS316,H3F

BAS316,H3F electronic component of Toshiba

Datasheet
Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1552 ea
Line Total: USD 0.16

19045 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7901 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

BAS316,H3F
Toshiba

1 : USD 0.039
10 : USD 0.0385
25 : USD 0.0334
100 : USD 0.0231
250 : USD 0.0212
500 : USD 0.0193
1000 : USD 0.0189
3000 : USD 0.0189
6000 : USD 0.0189

19045 - Warehouse 2


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

BAS316,H3F
Toshiba

1 : USD 0.1552
10 : USD 0.107
100 : USD 0.0609
1000 : USD 0.0345
3000 : USD 0.0265
9000 : USD 0.0265
24000 : USD 0.023
45000 : USD 0.0195
99000 : USD 0.0184

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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BAS316 Switching Diodes Silicon Epitaxial Planar BAS316BAS316BAS316BAS316 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode USC 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 100 V RM Reverse voltage V 100 R Peak forward current I 500 mA FM Average rectified current I 250 O Non-repetitive peak forward surge current I (Note 1) 1 A FSM Power dissipation P (Note 2) 230 mW D Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Measured with a 10 ms pulse. Note 2: Mounted on an FR4 board (20 mm 20 mm, Cu pad: 4 mm 4 mm) Start of commercial production 2016-08 2016 Toshiba Corporation 2016-10-20 1 Rev.1.0BAS316 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 1 mA 0.715 V F F V (2) I = 10 mA 0.855 F F V (3) I = 50 mA 1.00 F F V (4) I = 150 mA 1.25 F F Reverse current I (1) V = 25 V 30 nA R R I (2) V = 80 V 200 R R Total capacitance C V = 0 V, f = 1 MHz 0.35 pF t R Reverse recovery time t I = 10 mA, See Fig. 4.1. 3.0 ns rr F Fig. Fig. Fig. Fig. 4.14.14.14.1 Reverse recovery time (tReverse recovery time (tReverse recovery time (tReverse recovery time (trrrrrrrr) Test circuit) Test circuit) Test circuit) Test circuit 5. 5. MarkingMarking 5. 5. MarkingMarking 6. 6. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) 6. 6. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) Land Pattern Dimensions (Unit: mm)Land Pattern Dimensions (Unit: mm)Land Pattern Dimensions (Unit: mm)Land Pattern Dimensions (Unit: mm) 2016 Toshiba Corporation 2016-10-20 2 Rev.1.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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