BAS316 Switching Diodes Silicon Epitaxial Planar BAS316BAS316BAS316BAS316 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode USC 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 100 V RM Reverse voltage V 100 R Peak forward current I 500 mA FM Average rectified current I 250 O Non-repetitive peak forward surge current I (Note 1) 1 A FSM Power dissipation P (Note 2) 230 mW D Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Measured with a 10 ms pulse. Note 2: Mounted on an FR4 board (20 mm 20 mm, Cu pad: 4 mm 4 mm) Start of commercial production 2016-08 2016 Toshiba Corporation 2016-10-20 1 Rev.1.0BAS316 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 1 mA 0.715 V F F V (2) I = 10 mA 0.855 F F V (3) I = 50 mA 1.00 F F V (4) I = 150 mA 1.25 F F Reverse current I (1) V = 25 V 30 nA R R I (2) V = 80 V 200 R R Total capacitance C V = 0 V, f = 1 MHz 0.35 pF t R Reverse recovery time t I = 10 mA, See Fig. 4.1. 3.0 ns rr F Fig. Fig. Fig. Fig. 4.14.14.14.1 Reverse recovery time (tReverse recovery time (tReverse recovery time (tReverse recovery time (trrrrrrrr) Test circuit) Test circuit) Test circuit) Test circuit 5. 5. MarkingMarking 5. 5. MarkingMarking 6. 6. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) 6. 6. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) Land Pattern Dimensions (Unit: mm)Land Pattern Dimensions (Unit: mm)Land Pattern Dimensions (Unit: mm)Land Pattern Dimensions (Unit: mm) 2016 Toshiba Corporation 2016-10-20 2 Rev.1.0