Product Information

CMF03(TE12L,Q,M)

CMF03(TE12L,Q,M) electronic component of Toshiba

Datasheet
Diodes - General Purpose, Power, Switching 900V 1A M-FLAT

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1479 ea
Line Total: USD 443.7

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1939
6000 : USD 0.192
9000 : USD 0.1901
12000 : USD 0.1881
15000 : USD 0.1862
24000 : USD 0.1844
30000 : USD 0.1826
75000 : USD 0.1807
150000 : USD 0.179

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.485
10 : USD 0.6757
100 : USD 0.3348
500 : USD 0.2516
1000 : USD 0.189
3000 : USD 0.176

0 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3
Multiples : 1
3 : USD 0.2637
25 : USD 0.1615
96 : USD 0.1462
100 : USD 0.1428
263 : USD 0.1392

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Brand
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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CMF03 TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF03 High-Speed Rectification (Fast recovery) Radio-Frequency Rectification in Switching Regulators Unit: mm DC-DC Converters Repetitive peak reverse voltage : V = 900 V RRM Average forward current : I = 0.5 A F (AV) Peak forward voltage : V = 2.5 V (max) FM Very fast reverse-recovery time : t = 100 ns (max) rr Suitable for high-density board assembly due to the use of a small TM Toshiba Nickname: M FLAT Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit ANODE Repetitive peak reverse voltage V 900 V RRM CATHODE Average forward current I 0.5 (Note 1) A F(AV) Non-repetitive peak forward surge current I 10 (50 Hz) A FSM JEDEC Junction temperature T 40 to 125 C j JEITA Storage temperature range T 40 to 150 C stg TOSHIBA 3-4E1S Note 1: T = 102C Rectangular waveform ( = 180) Weight: 0.023 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Peak forward voltage V I = 0.5 A (pulse test) 2.5 V FM FM Repetitive peak reverse current I V = 900 V (pulse test) 50 A RRM RRM Reverse recovery time t I = 1 A, di/dt = -30 A/s 100 ns rr F Forward recovery time t I = 1 A 550 ns fr F Device mounted on a ceramic board board size 50 mm 50 mm 60 soldering land size 2 mm 2 mm board thickness 0.64 mm Device mounted on a glass-epoxy board board size 50 mm 50 mm Thermal resistance R 135 C/W th(j-a) soldering land size 6 mm 6 mm board thickness 1.6 mm Device mounted on a glass-epoxy board board size 50 mm 50 mm 210 soldering land size 2.1 mm 1.4 mm board thickness 1.6 mm Thermal resistance (junction to lead) R 16 C/W th(j-) Start of commercial production 2006-12 1 2019-03-07 CMF03 Marking Abbreviation Code Part No. F3 CMF03 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Usage Considerations 1) The absolute maximum ratings are rated values that must not be exceeded for a moment to have you use an element safely. Please refer to each following absolute maximum ratings on the occasion of use and design. VRRM: In DC circuit, the voltage peaks of applied voltage must be rated less than 80 % absolute maximum ratings. In AC circuit, the voltage peaks of applied voltage must be rated less than 50 % absolute maximum ratings. And, VRRM has a temperature coefficient of 0.1 %/. Please take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. IF(AV): We recommend that the current be in less than 80 % of rating and the junction temperature (Tj) be in less than 80 % of absolute maximum rating under the worst condition. This rating is based on the premise that the device is radiating heat enough. Therefore, when enough heat radiation is not expected, please consider the margin to the permission curve of Ta(max) - IF(AV) for using the device. IFSM : This rating specifies a non-repetitive limit value. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. Tj : Derate device parameters in proportion to this rating in order to ensure high reliability. We recommend that the junction temperature (Tj) of a device be kept below 80 %. 2) Thermal resistance (junction-to-ambient) varies with the mounting conditions of the device on the circuit board. An appropriate thermal resistance value that should be used, must be considering the circuit board design and soldering land size. 3) For other design considerations, see the Toshiba website. 2 2019-03-07 2.1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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