X-On Electronics has gained recognition as a prominent supplier of CMS14(TE12L,Q,M) Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. CMS14(TE12L,Q,M) Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

CMS14(TE12L,Q,M) Toshiba

CMS14(TE12L,Q,M) electronic component of Toshiba
CMS14(TE12L,Q,M) Toshiba
CMS14(TE12L,Q,M) Schottky Diodes & Rectifiers
CMS14(TE12L,Q,M)  Semiconductors

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See Product Specifications
Part No. CMS14(TE12L,Q,M)
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Toshiba Schottky Diodes & Rectifiers Diode Schottky 60V 2A
Datasheet: CMS14(TE12L,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2388 ea
Line Total: USD 716.4 
Availability - 37830
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
38518
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1128
Multiples : 1
1128 : USD 0.2306

5189
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 675
Multiples : 1
675 : USD 0.3857
899 : USD 0.2894
1000 : USD 0.27
3000 : USD 0.2411

37830
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.2388
6000 : USD 0.2325
9000 : USD 0.2274
15000 : USD 0.2271

5189
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 843
Multiples : 1
843 : USD 0.3086
899 : USD 0.2894
1000 : USD 0.27
3000 : USD 0.2411

38518
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1128
Multiples : 1
1128 : USD 0.2306

37830
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.2388
6000 : USD 0.2325
9000 : USD 0.2274
15000 : USD 0.2271

1686
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 451
Multiples : 1
451 : USD 0.8663

6786
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 705
Multiples : 1
705 : USD 0.3692
782 : USD 0.3328
1000 : USD 0.3146
3000 : USD 0.3013
6000 : USD 0.245

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Height
Length
Operating Temperature Range
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMS14(TE12L,Q,M) from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMS14(TE12L,Q,M) and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CMS14 Schottky Barrier Diode CMS14 Unit: mm Radio-Frequency Rectification in Switching Regulators DC-DC Converters Repetitive peak reverse voltage : V = 60 V RRM Average forward current : I = 2.0 A F (AV) Peak forward voltage : V = 0.58 V (max) FM Suitable for high-density board assembly due to the use of a small TM Toshiba Nickname: M FLAT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit 1 ANODE Repetitive peak reverse voltage V 60 V RRM 2 CATHODE Average forward current I 2.0 (Note 1) A F (AV) Non-repetitive peak forward surge current I 40 (50 Hz) A FSM Junction temperature T 40 to 150 C j JEDEC Storage temperature range T 40 to 150 C stg Note 1: T = 112C Device mounted on a ceramic board JEITA board size : 50 mm 50 mm TOSHIBA 3-4E1S Soldering land size : 2 mm 2 mm board thickness : 0.64 mm Weight: 0.023 g (typ.) Rectangular waveform : = 180, V = 30 V R Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1 A (pulse test) 0.45 FM (1) FM Peak forward voltage V V I = 2 A (pulse test) 0.53 0.58 FM (2) FM I V = 5 V (pulse test) 0.6 RRM (1) RRM Repetitive peak reverse current A I V = 60 V (pulse test) 25 200 RRM (2) RRM Junction capacitance C V = 10 V, f = 1 MHz 77 pF j R Device mounted on a ceramic board board size 50 mm 50 mm 60 soldering land size 2 mm 2 mm board thickness 0.64 mm Device mounted on a glass-epoxy board Thermal resistance board size 50 mm 50 mm R 135 C/W th (j-a) (junction to ambient) soldering land size 6 mm 6 mm board thickness 1.6 mm Device mounted on a glass-epoxy board board size 50 mm 50 mm 210 soldering land size 2.1 mm 1.4 mm board thickness 1.6 mm Thermal resistance (junction to lead) R 16 C/W th (j-) Start of commercial production 2002-12 1 2018-10-16 CMS14 Marking Abbreviation Code Part No. SD CMS14 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Handling Precaution 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. V : Use this rating with reference to (1) above. V has a temperature coefficient of 0.1%/C. Take this RRM RRM temperature coefficient into account designing a device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating of F (AV) I and T be below 120C. When using this device, take the margin into consideration by using an F (AV) j allowable Ta max - I curve. F (AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, FSM which seldom occurs during the lifespan of the device. T : Derate this rating when using a device in order to ensure high reliability. j We recommend that the device be used at a T of below 120C. j 3) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) For other design considerations, see the Toshiba website. 2 2018-10-16 2.1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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