Product Information

DF2B6USL,L3F

DF2B6USL,L3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD protection diode 3.0pF 5.5V
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7897 ea
Line Total: USD 0.79

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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DF2B6USL,L3F
Toshiba

1 : USD 0.7897
10 : USD 0.661
100 : USD 0.0878
1000 : USD 0.0585
2500 : USD 0.0491
10000 : USD 0.0445
20000 : USD 0.0421
50000 : USD 0.0409
100000 : USD 0.0374

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

DF2B6USL ESD Protection Diodes Silicon Epitaxial Planar DF2B6USLDF2B6USLDF2B6USLDF2B6USL 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2B6USL is a bidirectional TVS diode with low capacitance designed to protect IC devices from ESD and other transients voltage. By using original process, low dynamic resistance is incarnated, the clamp voltage can be suppressed to a low level. And ultra-compact package is ideal for high-density mounting. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs USB 2.0 Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 5 V signal line. (V 5.5 V) RWM (2) Protects devices with its high ESD performance. (V = 10 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.25 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 7.7 V I = 1.5 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.62 mm 0.32 mm size (Nickname: SL2)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging SL2 Start of commercial production 2016-09 2016-2018 2018-01-18 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0DF2B6USL 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 5.5 V RWM Total capacitance C V = 0 V, f = 1 MHz 1.5 3.0 pF t R Dynamic resistance R (Note 2) 0.25 DYN Electrostatic discharge voltage V (Note 3) 10 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 16 A. PP1 PP2 Note 3: Criterion: No damage to devices. 6.1. 6.1. 6.1. 6.1. ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note)ESD Clamp Waveform (Note) Fig. Fig. 6.1.16.1.1 +8 kV+8 kV Fig. Fig. 6.1.26.1.2 -8 kV-8 kV Fig. Fig. 6.1.16.1.1 +8 kV+8 kV Fig. Fig. 6.1.26.1.2 -8 kV-8 kV Fig. Fig. Fig. Fig. 6.1.36.1.36.1.36.1.3 IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact)IEC61000-4-2 (Contact) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2016-2018 2018-01-18 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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