Product Information

DF2B7AE,H3F

DF2B7AE,H3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD protection diode 10pF 6.8V
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0346 ea
Line Total: USD 138.4

0 - Global Stock
MOQ: 4000  Multiples: 4000
Pack Size: 4000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 4000
Multiples : 4000

Stock Image

DF2B7AE,H3F
Toshiba

4000 : USD 0.1784
8000 : USD 0.1775
12000 : USD 0.1763
20000 : USD 0.1753
24000 : USD 0.1742
28000 : USD 0.1731
40000 : USD 0.172
60000 : USD 0.1709
100000 : USD 0.1697

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

DF2B7AE,H3F
Toshiba

1 : USD 0.652
10 : USD 0.5358
100 : USD 0.106
1000 : USD 0.0544
4000 : USD 0.0454

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

DF2B7AE ESD Protection Diodes Silicon Epitaxial Planar DF2B7AEDF2B7AEDF2B7AEDF2B7AE 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2B7AE is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B7AE provides low dynamic resistance and superior protective performance. Furthermore, the DF2B7AE is housed in an ultra-compact package (0.8 mm 1.2 mm) to meet applications that require a small footprint. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 5 V signal line. (V 5.5 V) RWM (2) Protects devices with its high ESD performance. (V = 30 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.2 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 11 V I = 4 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.8 mm 1.2 mm size (Toshiba package name: ESC)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging ESC Start of commercial production 2016-10 2016-2017 2017-12-22 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0DF2B7AE 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 5.5 V RWM Total capacitance C V = 0 V, f = 1 MHz 8.5 10 pF t R Dynamic resistance R (Note 2) 0.2 DYN Electrostatic discharge voltage V (Note 3) 30 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 16 A. PP1 PP2 Note 3: Criterion: No damage to devices. 2016-2017 2017-12-22 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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