DF2B7M3SC
ESD Protection Diodes Silicon Epitaxial Planar
DF2B7M3SCDF2B7M3SCDF2B7M3SCDF2B7M3SC
1. 1. ApplicationsApplications
1. 1. ApplicationsApplications
ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
1: Pin 1
2: Pin 2
SC2
3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25))))
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Characteristics Symbol Note Rating Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact) V (Note 1) 12 kV
ESD
Electrostatic discharge voltage(IEC61000-4-2)(Air) 15 kV
Peak pulse power P 50 W
PK
Peak pulse current I (Note 2) 2.5 A
PP
Junction temperature T 150
j
Storage temperature T -55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
Start of commercial production
2013-09
2015-04-02
1
Rev.7.0DF2B7M3SC
4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25))))
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V : Working peak reverse
RWM
voltage
V : Reverse breakdown voltage
BR
I : Reverse breakdown current
BR
I : Reverse current
R
V : Clamp voltage
C
I : Peak pulse current
PP
R : Dynamic resistance
DYN
Fig. Fig. Fig. Fig. 4.14.14.14.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics
Characteristics Symbol Note Test Condition Min Typ. Max Unit
Working peak reverse voltage V 5 V
RWM
Reverse breakdown voltage V I = 1 mA 6 V
BR BR
Reverse current I V = 5 V 0.5 A
R RWM
Clamp voltage V (Note 1) I = 1 A 13 V
C PP
Dynamic resistance R (Note 2) 0.7
DYN
Total capacitance C (Note 3) V = 0 V, f = 1 MHz 0.1 0.2 pF
t R
Total capacitance C (Note 3) V = 0 V, f = 5 GHz 0.1 pF
t R
Note 1: Based on IEC61000-4-5 8/20 s pulse.
Note 2: TLP parameter: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using a least-squares fit of TLP characteristics at I between 8 A to 16 A.
PP
Note 3: Guaranteed by design.
2015-04-02
2
Rev.7.0