DF2S12FU,H3F Toshiba

DF2S12FU TOSHIBA Diodes for Protecting against ESD DF2S12FU Unit: mm Product for Use Only as Protection against Electrostatic Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. Two-pin ultra-small packages are suitable for higher mounting densities. Small total capacitance: CT = 15pF (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit USC JEDEC Power dissipation P 150 mW JEITA Junction temperature T 125 C j TOSHIBA 1-1E1A Storage temperature range T 55 to 125 C stg Weight: 4.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5mA 11.4 12.0 12.6 V Z Z Dynamic impedance Z I = 5mA 10 Z Z Knee dynamic impedance Z I = 0.5mA 20 ZK Z Reverse current I V = 9V 0.05 A R R Total capacitance C V = 0V , f=1MHz 15 pF T R Marking Equivalent Circuit (Top View) Z L Start of commercial production 1998-09 1 2014-03-01 DF2S12FU Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 20 kV (contact discharge) Criterion: No damage to device elements 2 2014-03-01