HN1B04FU Bipolar Transistors Silicon PNP/NPN Epitaxial Type HN1B04FU 1. Applications Low-Frequency Amplifiers 2. Q1 Features (1) High voltage: V = 50 V CEO (2) High collector current: I = 150 mA (max) C (3) High h : h = 120 to 400 FE FE (4) Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C 3. Q2 Features (1) High voltage: V = -50 V CEO (2) High collector current: I = -150 mA (max) C (3) High h : h = 120 to 400 FE FE (4) Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE FE C FE C 4. Q1, Q2 Common Features (1) AEC-Q101 qualified (Please see the orderable part number list) 5. Packaging and Internal Circuit 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 US6 Start of commercial production 1992-10 2021 2021-06-30 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0HN1B04FU 6. Orderable part number Orderable part number AEC-Q101 Note HN1B04FU-Y HN1B04FU-Y,LF General Use HN1B04FU-Y,LXGF YES (Note 1) Unintended Use (Note 1) HN1B04FU-Y,LXHF YES Automotive Use HN1B04FU-GR HN1B04FU-GR,LF General Use HN1B04FU-GR,LXGF YES (Note 1) Unintended Use (Note 1) HN1B04FU-GR,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 7. Q1 Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Emitter-base voltage V 60 V EBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 150 mA C Base current I 30 mA B 8. Q2 Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector-base voltage V -50 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -5 V EBO Collector current I -150 mA C Base current I -30 mA B 9. Q1, Q2 Common Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector power dissipation (Note 4) P 200 mW C Junction temperature (Note 2) T 150 j (Note 3) 125 Storage temperature (Note 2) T -55 to 150 stg (Note 3) -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number ending in XGF(T, XHF(T. Note 4: Device mounted on an FR4 board.(total rating)(25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.32 mm2 6) 2021 2021-06-30 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0