HN2D01FTE85LF Toshiba

HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Unit: mm Ultra High Speed Switching Application HN2D01F is composed of 3 independent diodes. Low forward voltage : V = 0.98 V (typ.) F (3) Fast reverse recovery time : t = 1.6 ns (typ.) rr Small total capacitance : C = 0.5 F (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 240 (*) mA FM Average forward current I 80 (*) mA O Surge current (10 ms) I 1 (*) A FSM Power dissipation P (Note 3) 300 mW D T (Note 1) 150 j Junction temperature C T (Note 2) 125 j JEDEC T (Note 1) 55 to 150 stg JEITA SC-74 Storage temperature C Tstg (Note 2) 55 to 125 1-3K1C TOSHIBA Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.015g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Total rating. (*) This is absolute maximum rating of single diode (Q1, Q2 or Q3). In the case of using 2 or 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one. Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.62 F (1) F Forward voltage V I = 10 mA 0.75 V F (2) F V I = 100 mA 0.98 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MH 0.5 3.0 pF T R z Reverse recovery time t I = 10 mA (Fig.1) 1.6 4.0 ns rr F Start of commercial production 1988-11 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation HN2D01F Pin Assignment (Top View) Marking Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation