Product Information

HN2D01JE(TE85L,F)

HN2D01JE(TE85L,F) electronic component of Toshiba

Datasheet
Toshiba Diodes - General Purpose, Power, Switching Switching Diode 2 Circuit 0.1A 80V
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6717 ea
Line Total: USD 0.67

7072 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
15 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.3887
10 : USD 0.2771
100 : USD 0.1254
1000 : USD 0.0932
4000 : USD 0.092
8000 : USD 0.0805
24000 : USD 0.0805
48000 : USD 0.0736
100000 : USD 0.0701

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

HN2D01JE TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application Unit: mm z The HN2D01JE is composed of 2 independent diodes. z Low forward voltage : V = 0.98V (typ.) F (3) z Fast reverse recovery time : t = 1.6ns (typ.) rr z Small total capacitance : C = 0.5pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 85 V RM 1.ANODE1 Reverse voltage V 80 V R 2.NC 3.ANODE2 Maximum (peak) forward current I 200 * mA FM 4.CATHODE2 Average forward current I 100 * mA 5.CATHODE1 O Surge current (10ms) I 1 * A FSM Power dissipation P 100 ** mW Junction temperature T 150 C j JEDEC Storage temperature T 55 to 150 C JEITA stg TOSHIBA 1-2W1B Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.003 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating total rating = unit rating 1.5 **: Total rating. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.62 F (1) F Forward voltage V V I = 10mA 0.75 F (2) F V I = 100mA 0.98 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 0.5 pF T R Reverse recovery time t I = 10mA, Fig.1 1.6 ns rr F Start of commercial production 2001-10 1 2014-03-01 HN2D01JE Pin Assignment (Top View) Marking 5 4 A1 Q1 Q2 1 2 3 Fig. 1 Reverse Recovery Time (t ) Test Circuit rr 2 2014-03-01

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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