RN1307(TE85L,F) Toshiba

RN1307(TE85L,F) electronic component of Toshiba
RN1307(TE85L,F) Toshiba
RN1307(TE85L,F) Bipolar Transistors - Pre-Biased
RN1307(TE85L,F)  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RN1307(TE85L,F) Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. RN1307(TE85L,F) Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. RN1307(TE85L,F)
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased 100mA 50volts 3Pin 10K x 47Kohms
Datasheet: RN1307(TE85L,F) Datasheet (PDF)
Price (USD)
1: USD 0.2425 ea
Line Total: USD 0.24 
Availability : 0
  
QtyUnit Price
1$ 0.2425
10$ 0.1637
100$ 0.0996
500$ 0.0598
1000$ 0.0473
3000$ 0.0418
6000$ 0.0363
9000$ 0.033
24000$ 0.0297

Availability 0
Ship by Mon. 15 Sep to Wed. 17 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2425
10$ 0.1637
100$ 0.0996
500$ 0.0598
1000$ 0.0473
3000$ 0.0418
6000$ 0.0363
9000$ 0.033
24000$ 0.0297

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RN1307(TE85L,F) from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RN1307(TE85L,F) and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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RN1307 to RN1309 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1307/08/09 1. Applications Switching Inverter Circuits Interfacing Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2307 to RN2309 3. Equivalent Circuit 4. Bias Resistor Values Part No. R1 (k) R2 (k) RN1307 10 47 RN1308 22 47 RN1309 47 22 Start of commercial production 1988-04 2021 2021-08-24 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0RN1307 to RN1309 5. Packaging and Pin Assignment 1: Base 2: Emitter 3: Collector USM 6. Orderable part number Orderable part number AEC-Q101 Note Note RN1307 RN1307,LF General Use RN1307,LXGF YES (Note 1) Unintended Use (Note 1) RN1307,LXHF YES Automotive Use RN1308 RN1308,LF General Use RN1308,LXGF YES (Note 1) Unintended Use (Note 1) RN1308,LXHF YES Automotive Use RN1309 RN1309,LF General Use RN1309,LXGF YES (Note 1) Unintended Use (Note 1) RN1309,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 CEO Emitter-base voltage RN1307 V 6 V EBO RN1308 7 RN1309 15 Collector current I 100 mA C Collector power dissipation P 100 mW C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2021 2021-08-24 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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