RN1911,LF(CT Toshiba

RN1910, RN1911 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1910, RN1911 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm AEC-Q101 Qualified (Note1) Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN2910 and RN2911 Note1: For detail information, please contact to our sales. Equivalent Circuit JEDEC JEITA TOSHIBA 2-2J1A Weight: 6.8 mg (typ.) Equivalent Circuit (Top View) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characterisstic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Collector power dissipation P * 200 mW C Junction temperature T 150 C j Storage temperature range T 55 to150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Start of commercial production 1990-12 2019 2019-11-15 1 Toshiba Electronic Devices & Storage Corporation RN1910, RN1911 Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 mA 100 nA CBO CB E Emitter cut-off current I V = 5 V, I = 0 mA 100 nA EBO EB C DC current gain hFE VCE = 5 V, IC = 1 mA 120 700 Collector-emitter saturation voltage V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 5 mA 250 MHz T CE C Collector output capacitance C V = 10 V, I = 0 V, f = 1 MHz 3 6 pF ob CB E RN1910 3.29 4.7 6.11 Input resistor R1 k RN1911 7 10 13 2019 2019-11-15 2 Toshiba Electronic Devices & Storage Corporation