RN4982FE Bipolar Transistors Silicon NPN/PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN4982FE 1. Applications Switching Inverter Circuits Interfacing Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. 3. Equivalent Circuit 4. Packaging and Pin Assignment 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ES6 Start of commercial production 2000-05 2021 2021-08-18 1 Toshiba Electronic Devices & Storage Corporation Rev.1.0RN4982FE 5. Orderable part number Orderable part number AEC-Q101 Note RN4982FE,LF General Use RN4982FE,LXGF YES (Note 1) Unintended Use (Note 1) RN4982FE,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 6. Q1 Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 CEO Emitter-base voltage V 10 EBO Collector current I 100 mA C 7. Q2 Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector-base voltage V -50 V CBO Collector-emitter voltage V -50 CEO Emitter-base voltage V -10 EBO Collector current I -100 mA C 8. Q1, Q2 Common Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector power dissipation (Note 1) P 100 mW C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 9. Q1 Electrical Characteristics (Unless otherwise specified, T = 25 ) a Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 mA 100 nA CBO CB E Collector cut-off current I V = 50 V, I = 0 mA 500 CEO CE B Emitter cut-off current I V = 10 V, I = 0 mA 0.38 0.71 mA EBO EB C DC current gain h V = 5 V, I = 10 mA 50 FE CE C Collector-emitter saturation voltage V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.2 2.4 I(ON) CE C Input voltage (off) V V = 5 V, I = 0.1 mA 1.0 1.5 I(off) CE C Transition frequency f V = 10 V, I = 5 mA 250 MHz T CE C Collector output capacitance C V = 10 V, I = 0 mA, f = 1 MHz 3 6 pF ob CB E 2021 2021-08-18 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0