RN49A2,LF(CT Toshiba

RN49A2,LF(CT electronic component of Toshiba
RN49A2,LF(CT Toshiba
RN49A2,LF(CT Bipolar Transistors - Pre-Biased
RN49A2,LF(CT  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RN49A2,LF(CT Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. RN49A2,LF(CT Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. RN49A2,LF(CT
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased Bias Resistor Built- in Transistor, 2in1
Datasheet: RN49A2,LF(CT Datasheet (PDF)
Price (USD)
1: USD 0.3375 ea
Line Total: USD 0.34 
Availability : 54
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.3375
10$ 0.2087
100$ 0.1032
500$ 0.0724
1000$ 0.0616
3000$ 0.0484
6000$ 0.0429
9000$ 0.0363
24000$ 0.0341

Availability 54
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3375
10$ 0.2087
100$ 0.1032
500$ 0.0724
1000$ 0.0616
3000$ 0.0484
6000$ 0.0429
9000$ 0.0363
24000$ 0.0341

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Collector- Base Voltage Vcbo
Emitter- Base Voltage Vebo
Brand
Maximum Dc Collector Current
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RN49A2,LF(CT from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RN49A2,LF(CT and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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RN49A2 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A2 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Two devices are incorporated into an Ultra-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 Q2 C C R1 R1 B B JEDEC E E JEITA TOSHIBA 2-2J1A Q1 Weight: 0.006g (typ.) R1: 47 k, R2: 47 k Q2 R1: 2.2 k, R2: 47 k Q1: RN1104F equivalent Q2: RN2105F equivalent Marking Equivalent Circuit (top view) 6 5 4 6 5 4 Q2 Q1 28 1 2 3 1 2 3 Start of commercial production 1999-10 2020 2020-01-07 1 Toshiba Electronic Devices & Storage Corporation R2 R2 RN49A2 Absolute Maximum Ratings (Ta = 25C) (Q1) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 10 V EBO Collector current I 100 mA C Absolute Maximum Ratings (Ta = 25C) (Q2) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage VEBO 5 V Collector current I 100 mA C Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector power dissipation P (Note 1) 200 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 2020 2020-01-07 2 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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