SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J325F Power Management Switch Applications Unit: mm +0.5 1.5-V drive 2.5-0.3 +0.25 Low ON-resistance: R = 311 m (max) ( V = -1.5 V) DS(ON) GS 1.5-0.15 R = 231 m (max) ( V = -1.8 V) DS(ON) GS RDS(ON) = 179 m (max) ( VGS = -2.5 V) 1 RDS(ON) = 150 m (max) ( VGS = -4.5 V) 2 3 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 8 V GSS DC I (Note 1) -2.0 D Drain current A Pulse I (Note 1) -4.0 DP 1.Gate P (Note 2) 600 D 2.Source Power dissipation mW 3.Drain t = 1s 1200 S-MINI Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg JEDEC TO-236MOD Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-59 temperature/current/voltage and the significant change in TOSHIBA 2-3F1F temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 12 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit 3 3 KFE 1 2 1 2 Start of commercial production 2010-01 1 2016-11-10 2.90.2 +0.2 1.9 1.1-0.1 0.95 0.95 0~0.1 0.3 +0.1 0.16-0.06 +0.1 0.4-0.05SSM3J325F Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 V -20 V Drain-source breakdown voltage V I = -1 mA, V = 5 V .(Note 4) -15 V (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 3) 2.2 4.4 S fs DS D I = -1.0 A, V = -4.5 V (Note 3) 123 150 D GS I = -0.6 A, V = -2.5 V (Note 3) 143 179 D GS Drainsource ON-resistance R m DS (ON) I = -0.4 A, V = -1.8 V (Note 3) 170 231 D GS I = -0.2 A, V = -1.5 V (Note 3) 192 311 D GS Input capacitance C 270 iss V = -10 V, V = 0 V DS GS Output capacitance C 40 pF oss f = 1 MHz Reverse transfer capacitance Crss 32 Turn-on time t 17 on V = -10 V, I = -1.0 A DD D Switching time ns Turn-off time t V = 0 to -2.5 V, R = 4.7 43 off GS G Total gate charge Q 4.6 g V = -10 V, I = -2.0 A, DD DD Gate-source charge Q 0.4 nC gs1 V = -4.5V GS Gate-drain charge Q 0.9 gd Drain-source forward voltage V I = 2.0 A, V = 0 V (Note 3) 0.97 1.2 V DSF D GS Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V mode. Note that (BR)DSX the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit 0 V (b) VIN 90% OUT 0 IN 10% 2.5 V 2.5V R L (c) V OUT V DS (ON) 90% 10 s V DD V = -10 V DD 10% R = 4.7 G V DD t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the th D SSM3J325F). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V . th. GS(off) th GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and drain power dissipation P vary depending on board material, board area, board th (ch-a) D thickness and pad area. When using this device, please take heat dissipation into consideration. 2 2016-11-10 R G