X-On Electronics has gained recognition as a prominent supplier of SSM3J327R,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J327R,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J327R,LF Toshiba

SSM3J327R,LF electronic component of Toshiba
SSM3J327R,LF Toshiba
SSM3J327R,LF MOSFETs
SSM3J327R,LF  Semiconductors

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See Product Specifications
Part No. SSM3J327R,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Small-Signal MOSFET
Datasheet: SSM3J327R,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1676 ea
Line Total: USD 0.84 
Availability - 2900
Ship by Wed. 11 Jun to Mon. 16 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2900
Ship by Wed. 11 Jun to Mon. 16 Jun
MOQ : 5
Multiples : 5
5 : USD 0.1676
50 : USD 0.1314
150 : USD 0.1132
500 : USD 0.0671
3000 : USD 0.0598
6000 : USD 0.056

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Factory Pack Quantity :
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM3J327R,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J327R,LF and other electronic components in the MOSFETs category and beyond.

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SSM3J327R MOSFETs Silicon P-Channel MOS (U-MOS ) SSM3J327R 1. Applications Power Management Switches 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : R = 240 m (max) ( V = -1.5 V) DS(ON) GS R = 168 m (max) ( V = -1.8 V) DS(ON) GS R = 123 m (max) ( V = -2.5 V) DS(ON) GS R = 93 m (max) ( V = -4.5 V) DS(ON) GS 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Drain SOT-23F Start of commercial production 2009-12 2021 2021-10-21 1 Toshiba Electronic Devices & Storage Corporation Rev.1.0SSM3J327R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 8 V GSS Drain current (DC) (Note 1) I -3.9 A D Drain current (pulsed) (Note 1), (Note 2) I -7.8 DP Power dissipation (Note 3) P 1 W D Power dissipation t = 10 s (Note 3) 2 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 Note 2: Pulse width (PW) 10 ms, duty 1% Note 3: Device mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad : 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2021 2021-10-21 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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