SSM3J351R MOSFETs Silicon P-Channel MOS (U-MOS ) SSM3J351R 1. Applications Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V drive (3) Low drain-source on-resistance : R = 107 m (typ.) (V = -10 V) DS(ON) GS R = 122 m (typ.) (V = -4.5 V) DS(ON) GS R = 129 m (typ.) (V = -4.0 V) DS(ON) GS 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J351R,LF General Use SSM3J351R,LXGF YES (Note 1) Unintended Use (Note 1) SSM3J351R,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. Start of commercial production 2016-07 2016-2021 2021-01-18 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0SSM3J351R 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Drain-source voltage V -60 V DSS Gate-source voltage V -20/+10 GSS Drain current (DC) (Note 1) I -3.5 A D Drain current (pulsed) (Note 1), (Note 2) I -14 DP Power dissipation (Note 3) P 1 W D Power dissipation (t 10 s) (Note 3) P 2 D Single-pulse avalanche energy (Note 4) E 8.9 mJ AS Avalanche current I 3.5 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 1 ms, duty 1 % Note 3: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note 4: V = 25 V, T = 25 (Initial state), L = 1 mH, R = 25 DD ch G Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016-2021 2021-01-18 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0