0.8 mm0.8 mm SiUD401ED www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 0806 Single D TrenchFET Gen III p-channel power MOSFET 3 Ultra small 0.8 mm x 0.6 mm outline Ultra thin 0.4 mm max. height Typical ESD protection 1300 (HBM) -2.5 V rated R DS(on) 1 100 % R tested g G 2 11 S Material categorization: for definitions of compliance Top View Bottom View please see www.vishay.com/doc 99912 Marking code: K APPLICATIONS S PRODUCT SUMMARY Load switch V (V) -30 DS High speed switching max. ( ) at V = -10 V 1.573 R DS(on) GS Power management in battery- G R max. () at V = -4.5 V 1.850 DS(on) GS operated, mobile and wearable R max. () at V = -2.5 V 3.500 DS(on) GS devices Q typ. (nC) 0.44 g P-Channel MOSFET a, f I (A) -0.5 D D Configuration Single ORDERING INFORMATION Package PowerPAK 0806 Lead (Pb)-free and halogen-free SiUD401ED-T1-GE3 Note The lead finish is NiPdAu and classed as E4 finish ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -30 DS V Gate-source voltage V 12 GS a, f T = 25 C -0.5 A a T = 70 C -0.46 A Continuous drain current (T = 150 C) I J D b T =25 C -0.32 A b T = 70 C -0.27 A A Pulsed drain current (t = 100 s) I -1 DM a, f T = 25 C -0.5 A Continuous source-drain diode current I S b T = 70 C -0.31 A a T = 25 C 1.25 A a T = 70 C 0.8 A Maximum power dissipation P W D b T = 25 C 0.37 A b T = 70 C 0.24 A Operating junction and storage temperature range T , T -55 to +150 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a, d Maximum junction-to-ambient 80 100 t 5 s R C/W thJA b, e Maximum junction-to-ambient 265 335 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s c. Refer to IPC / JEDEC (J-STD-020), no manual or hand soldering d. Maximum under steady state conditions is 135 C/W e. Maximum under steady state conditions is 400 C/W f. Package limited S20-0847-Rev. B, 26-Oct-2020 Document Number: 77595 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 0.6 mm6mm 0.4 mmSiUD401ED www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -30 - - V DS GS D V temperature coefficient V /T - -22.1 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -0.6 - -1.4 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.5 DS GS Gate-source leakage I A GSS V = 0 V, V = 12 V - - 15 DS GS V = -30 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -30 V, V = 0 V, T = 55 C - - -10 DS GS J a On-state drain current I V -5 V, V = 0 V -0.5 - - A D(on) DS GS V = -10 V, I = -0.2 A - 1.230 1.573 GS D a Drain-source on-state resistance R V = -4.5 V, I = -0.1 A - 1.480 1.850 DS(on) GS D V = -2.5 V, I = -0.1 A - 2.150 3.500 GS D a Forward transconductance g V = -10 V, I = -0.4 A - 0.65 - S fs DS D b Dynamic Input capacitance C -33 - iss Output capacitance C V = -15 V, V = 0 V, f = 1 MHz -5.6 - pF oss DS GS Reverse transfer capacitance C -3.3 - rss V = -15 V, V = -10 V, I = -0.2 A - 1.3 2 DS GS D Total gate charge Q g V = -15 V, V = -4.5 V, I = -0.2 A - 0.44 0.70 DS GS D nC Gate-source charge Q -0.13- gs V = -15 V, V = -4.5 V, I = -0.2 A DS GS D Gate-drain charge Q -0.16- gd Gate resistance R f = 1 MHz 14 70 140 g Turn-on delay time t -11 20 d(on) Rise time t -10 20 r V = -15 V, R = 75 , I -0.2 A, DD L D V = -4.5 V, R = 1 Turn-off delay time t GEN g -17 35 d(off) Fall time t -5 10 f ns Turn-on delay time t -5 10 d(on) Rise time t -5 10 r V = -15 V, R = 75 , I -0.2 A, DD L D V = -12 V, R = 1 Turn-off delay time t GEN g -15 30 d(off) Fall time t -5 10 f Drain-Source Body Diode Characteristics c Continuous source-drain diode current I T = 25 C - - -0.5 S A A Pulse diode forward current I -- -1 SM Body diode voltage V I = -0.2 A, V = 0 V - -0.9 -1.2 V SD S GS Body diode reverse recovery time t -15 30 ns rr Body diode reverse recovery charge Q -10 20 nC rr I = -0.2 A, di/dt = 100 A/s, F T = 25 C Reverse recovery fall time t J -10 - a ns Reverse recovery rise time t -5 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0847-Rev. B, 26-Oct-2020 Document Number: 77595 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000