X-On Electronics has gained recognition as a prominent supplier of SSM3K336R,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K336R,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K336R,LF Toshiba

SSM3K336R,LF electronic component of Toshiba
SSM3K336R,LF Toshiba
SSM3K336R,LF MOSFETs
SSM3K336R,LF  Semiconductors

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Part No. SSM3K336R,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 30 V 3A (Ta) 1W (Ta) Surface Mount SOT-23F
Datasheet: SSM3K336R,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3753: USD 0.0693 ea
Line Total: USD 260.08 
Availability - 0
MOQ: 3753  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.0895
6000 : USD 0.0822
9000 : USD 0.075

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3753
Multiples : 1
3753 : USD 0.0693

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.1191
6000 : USD 0.108
15000 : USD 0.0984
30000 : USD 0.0921
75000 : USD 0.0825
150000 : USD 0.0805

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.5452
10 : USD 0.3873
100 : USD 0.2414
500 : USD 0.1651
1000 : USD 0.127

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.5452
10 : USD 0.3873
100 : USD 0.2414
500 : USD 0.1651
1000 : USD 0.127

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.0747
6000 : USD 0.0734
12000 : USD 0.0721
18000 : USD 0.0709
24000 : USD 0.0696

0
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 1.242
10 : USD 0.9261
100 : USD 0.2311
500 : USD 0.1544
1000 : USD 0.1188
3000 : USD 0.1004
9000 : USD 0.0951
24000 : USD 0.0939
45000 : USD 0.0918

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 92
Multiples : 1
92 : USD 0.1122
100 : USD 0.0949
250 : USD 0.0777
500 : USD 0.0761

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Configuration
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM3K336R,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K336R,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336RSSM3K336RSSM3K336RSSM3K336R 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Power Management Switches DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : R = 95 m (max) ( V = 10 V) DS(ON) GS R = 140 m (max) ( V = 4.5 V) DS(ON) GS 3. 3. 3. 3. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1. Gate 2. Source 3. Drain SOT-23F Start of commercial production 2012-07 2014-04-04 1 Rev.2.0SSM3K336R 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 3 A D Drain current (pulsed) (Note 1,2) I 8 DP Power dissipation (Note 3) P 1 W D Power dissipation (t 10 s) (Note 3) P 2 W D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty 1% Note 3: Device mounted on a FR4 board.(25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the power dissipation, P , vary according to the th(ch-a) D board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2014-04-04 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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