Product Information

TC74HC32AP(F)

TC74HC32AP(F) electronic component of Toshiba

Datasheet
OR Gate 4-Element 2-IN CMOS 14-Pin PDIP Tube
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

66: USD 0.5801 ea
Line Total: USD 38.29

0 - Global Stock
MOQ: 66  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 65
Multiples : 1
65 : USD 0.6028

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RoHS - XON
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Additional Infomation About Product

TC74HC32AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC32AP, TC74HC32AF Quad 2-Input OR Gate The TC74HC32A is a high speed CMOS 2-INPUT OR GATE 2 TC74HC32AP fabricated with silicon gate C MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features TC74HC32AF High speed: t = 6 ns (typ.) at V = 5 V pd CC Low power dissipation: I = 1 A (max) at Ta = 25C CC High noise immunity: V = V = 28% V (min) NIH NIL CC Output drive capability: 10 LSTTL loads Symmetrical output impedance: I = I = 4 mA (min) OH OL Balanced propagation delays: t t pLH pHL Wide operating voltage range: V (opr) = 2 to 6 V CC Pin and function compatible with 74LS32 Weight DIP14-P-300-2.54 : 0.96 g (typ.) Pin Assignment SOP14-P-300-1.27A : 0.18 g (typ.) IEC Logic Symbol Start of commercial production 1986-05 1 2014-03-01 TC74HC32AP/AF Truth Table A B Y H H H L H H H L H L L L Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7 V CC DC input voltage V 0.5 to V + 0.5 V IN CC DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 500 (DIP) (Note 2)/180 (SOP) mW D Storage temperature T 65 to 150 C stg Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = 40C to 65C. From Ta = 65C to 85C a derating factor of 10 mW/C shall be applied until 300 mW. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage V 2 to 6 V CC Input voltage V 0 to V V IN CC Output voltage V 0 to V V OUT CC Operating temperature T 40 to 85 C opr 0 to 1000 (V = 2.0 V) CC Input rise and fall time t , t 0 to 500 (V = 4.5 V) ns r f CC 0 to 400 (V = 6.0 V) CC Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either V or GND. CC 2 2014-03-01

HS Compliance

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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