Product Information

TJ60S06M3L(T6L1,NQ

TJ60S06M3L(T6L1,NQ electronic component of Toshiba

Datasheet
MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 1.1869 ea
Line Total: USD 2373.8

1940 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 2000  Multiples: 2000
Pack Size: 2000

 More Buying Options & Price Grid(s)

Availability Price Quantity
1940 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 2000
Multiples : 2000
2000 : USD 1.0467
4000 : USD 1.0467
6000 : USD 1.0467

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Toshiba"

Image Description
TK100A08N1,S4X electronic component of Toshiba TK100A08N1,S4X

Toshiba MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
Stock : 0

TJ8S06M3L electronic component of Toshiba TJ8S06M3L

MOSFET, P-CH, -10V, -8A, TO-252
Stock : 0

TK100A06N1,S4X electronic component of Toshiba TK100A06N1,S4X

MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V
Stock : 0

TJ8S06M3L(T6L1,NQ) electronic component of Toshiba TJ8S06M3L(T6L1,NQ)

Toshiba MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104
Stock : 14

TK100A08N1,S4X(S electronic component of Toshiba TK100A08N1,S4X(S

Trans MOSFET N-CH 80V 214A 3-Pin(3+Tab) TO-220SIS
Stock : 0

TK100A10N1,S4X electronic component of Toshiba TK100A10N1,S4X

Toshiba MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
Stock : 0

TK040N65Z,S1F electronic component of Toshiba TK040N65Z,S1F

MOSFET Power MOSFET 57A 360W 650V
Stock : 3

TJ9A10M3,S4Q electronic component of Toshiba TJ9A10M3,S4Q

Transistor: P-MOSFET; unipolar; -100V; -9A; 19W; TO220FP
Stock : 0

TK100A06N1,S4X(S electronic component of Toshiba TK100A06N1,S4X(S

Transistor: N-MOSFET; unipolar; 60V; 263A; 45W; TO220FP
Stock : 618

TK090Z65Z,S1F electronic component of Toshiba TK090Z65Z,S1F

MOSFET PWR MOSFET PD=230W F=1MHZ
Stock : 23

More Products By Category "MOSFET"

Image Description
DMTH4007SPS-13 electronic component of Diodes Incorporated DMTH4007SPS-13

MOSFET 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A
Stock : 2500

SP8M51FRATB electronic component of ROHM SP8M51FRATB

MOSFET Nch+Pch 100V Vds 3A 0.135Rds(on) 8.5Qg
Stock : 22361

SUD90330E-GE3 electronic component of Vishay SUD90330E-GE3

MOSFET 200V Vds 20V Vgs TO-252
Stock : 0

IXFK24N100F electronic component of IXYS IXFK24N100F

MOSFET IXFK24N100F 24A 1000V F-Class HiPerRF Capable MOSFET
Stock : 0

NVMFD5C650NLWFT1G electronic component of ON Semiconductor NVMFD5C650NLWFT1G

MOSFET T6 60V LL S08FL DS
Stock : 0

DMN33D8LT-13 electronic component of Diodes Incorporated DMN33D8LT-13

MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
Stock : 47960

TK380A60Y,S4X electronic component of Toshiba TK380A60Y,S4X

MOSFET N-Ch DTMOSV 600V 30W 590pF 9.7A
Stock : 4

SIHP17N80E-GE3 electronic component of Vishay SIHP17N80E-GE3

MOSFET 800V Vds 30V Vgs TO-220AB
Stock : 2525

R6020KNZ1C9 electronic component of ROHM R6020KNZ1C9

MOSFET Nch 600V 20A Si MOSFET
Stock : 0

Additional Infomation About Product

TJ60S06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S06M3LTJ60S06M3LTJ60S06M3LTJ60S06M3L 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 8.6 m (typ.) (V = -10 V) DS(ON) GS (3) Low leakage current: I = -10 A (max) (V = -60 V) DSS DS (4) Enhancement mode: V = -2.0 to -3.0 V (V = -10 V, I = -1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 2011-03 2016-2020 2020-07-06 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0TJ60S06M3L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -60 V DSS Gate-source voltage V -20/+10 GSS Drain current (DC) (Note 1) I -60 A D Drain current (pulsed) (Note 1) I -120 DP Power dissipation (T = 25) P 100 W c D Single-pulse avalanche energy (Note 2) E 132 mJ AS Avalanche current I -60 A AR Channel temperature (Note 3) T 175 ch Storage temperature (Note 3) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 1.5 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: V = -25 V, T = 25 (initial), L = 50 H, R = 25 , I = -60 A DD ch G AR Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016-2020 2020-07-06 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted