Product Information

TK040N65Z,S1F

TK040N65Z,S1F electronic component of Toshiba

Datasheet
MOSFET Power MOSFET 57A 360W 650V
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.4287 ea
Line Total: USD 7.43

2 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 7.4287
10 : USD 7.4287

2713 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 11.0055
10 : USD 9.591

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Hts Code
LoadingGif

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Additional Infomation About Product

TK040N65Z MOSFETs Silicon N-Channel MOS (DTMOS) TK040N65ZTK040N65ZTK040N65ZTK040N65Z 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Power Supplies 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low drain-source on-resistance: R = 0.033 (typ.) DS(ON) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: V = 3 to 4 V (V = 10 V, I = 2.85 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-247 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 650 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 57 A D Drain current (pulsed) (Note 1) I 228 DP Power dissipation (T = 25 ) P 360 W c D Single-pulse avalanche energy (Note 2) E 702 mJ AS Single-pulse avalanche current I 14.2 A AS Reverse drain current (DC) (Note 1) I 57 DR Reverse drain current (pulsed) (Note 1) I 228 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2018-07 2017-2018 2018-07-18 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TK040N65Z 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.347 /W th(ch-c) Channel-to-ambient thermal resistance R 50 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 6.16 mH, I = 14.2 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2017-2018 2018-07-18 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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