Product Information

TJ8S06M3L(T6L1,NQ)

TJ8S06M3L(T6L1,NQ) electronic component of Toshiba

Datasheet
Toshiba MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6209 ea
Line Total: USD 0.62

13 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
13 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.6209
10 : USD 0.6209

13 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 13
Multiples : 1
13 : USD 0.6209

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Toshiba"

Image Description
TK100A08N1,S4X electronic component of Toshiba TK100A08N1,S4X

Toshiba MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
Stock : 0

TK100A10N1,S4X(S electronic component of Toshiba TK100A10N1,S4X(S

TK100A10N1S4XS toshiba mosfet transistors discrete semiconductors
Stock : 100

TK100A06N1,S4X electronic component of Toshiba TK100A06N1,S4X

MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V
Stock : 0

TK100E06N1,S1X electronic component of Toshiba TK100E06N1,S1X

Toshiba MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
Stock : 150

TK100A08N1,S4X(S electronic component of Toshiba TK100A08N1,S4X(S

Trans MOSFET N-CH 80V 214A 3-Pin(3+Tab) TO-220SIS
Stock : 0

TK100A10N1,S4X electronic component of Toshiba TK100A10N1,S4X

Toshiba MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
Stock : 0

TK040N65Z,S1F electronic component of Toshiba TK040N65Z,S1F

MOSFET Power MOSFET 57A 360W 650V
Stock : 3

TJ9A10M3,S4Q electronic component of Toshiba TJ9A10M3,S4Q

Transistor: P-MOSFET; unipolar; -100V; -9A; 19W; TO220FP
Stock : 0

TK100A06N1,S4X(S electronic component of Toshiba TK100A06N1,S4X(S

Transistor: N-MOSFET; unipolar; 60V; 263A; 45W; TO220FP
Stock : 615

TK090Z65Z,S1F electronic component of Toshiba TK090Z65Z,S1F

MOSFET PWR MOSFET PD=230W F=1MHZ
Stock : 23

More Products By Category "MOSFET"

Image Description
OP-LXV250-024SW electronic component of Excelsys OP-LXV250-024SW

OPLXV250024SW excelsys mosfet transistors discrete semiconductors
Stock : 0

CAT24C32DWF electronic component of ON Semiconductor CAT24C32DWF

Processor Supervisor 1 Active High/Active Low/Open Drain
Stock : 0

TD9944TG-G electronic component of Microchip TD9944TG-G

Trans MOSFET N-CH 240V 8-Pin SOIC N T/R
Stock : 8514

TC6320K6-G electronic component of Microchip TC6320K6-G

N and P channel enhancement mode MOSFET pair - 200V – DFN 8 - 37,400 mg - Low threshold - ...
Stock : 14513

PBSM5240PF,115 electronic component of Nexperia PBSM5240PF,115

MOSFET BISS
Stock : 0

SZHBL5006P2T5G electronic component of ON Semiconductor SZHBL5006P2T5G

LED Protection Devices SHUNT HBLED PROTECTION
Stock : 0

SVD5867NLT4G electronic component of ON Semiconductor SVD5867NLT4G

MOSFET NFET DPAK 60V 18A 43MOHM
Stock : 0

SVD5865NLT4G electronic component of ON Semiconductor SVD5865NLT4G

MOSFET NFET DPAK 60V 34A 18MOHM
Stock : 2490

Additional Infomation About Product

TJ8S06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ8S06M3LTJ8S06M3LTJ8S06M3LTJ8S06M3L 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 80 m (typ.) (V = -10 V) DS(ON) GS (3) Low leakage current: I = -10 A (max) (V = -60 V) DSS DS (4) Enhancement mode: V = -2.0 to -3.0 V (V = -10 V, I = -1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 2011-03 2017-2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.9.0TJ8S06M3L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -60 V DSS Gate-source voltage V -20/+10 GSS Drain current (DC) (Note 1) I -8 A D Drain current (pulsed) (Note 1) I -16 DP Power dissipation (T = 25) P 27 W c D Single-pulse avalanche energy (Note 2) E 19 mJ AS Avalanche current I -8 A AR Channel temperature (Note 3) T 175 ch Storage temperature (Note 3) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 5.4 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: V = -25 V, T = 25 (initial), L = 404 H, R = 25 , I = -8 A DD ch G AR Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2017-2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.9.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted