Product Information

TK100E08N1,S1X(S

TK100E08N1,S1X(S electronic component of Toshiba

Datasheet
MOSFET N Trench 80V 100A 4V @ 1mA 3.2 mΩ @ 50A,10V TO-220 RoHS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1543 ea
Line Total: USD 3.15

1 - Global Stock
Ships to you between
Tue. 21 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - WHS 1


Ships to you between
Tue. 21 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 3.2208
10 : USD 2.7918
30 : USD 2.522
100 : USD 2.248
500 : USD 2.1232
1000 : USD 2.0687

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The Toshiba TK100E08N1,S1X(S is an N-channel, transformer-coupled power MOSFET (metal-oxide-semiconductor field-effect transistor) with an 80V drain-source voltage (VDS which is also referred to as the breakdown voltage), and a 100A drain current (ID). It has a low on-resistance of 3.2mΩ @ 50A, a gate-source threshold voltage of 4V @ 1mA, and a gate-source voltage of 10V. It is packaged in a TO-220 RoHS-compatible (Restriction of Hazardous Substances) case.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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