Product Information

TK40E10N1,S1X(S

TK40E10N1,S1X(S electronic component of Toshiba

Datasheet
Transistor: N-MOSFET; unipolar; 100V; 40A; 126W; TO220AB
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6409 ea
Line Total: USD 1.64

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 1.6841
10 : USD 1.4293
50 : USD 1.2898
100 : USD 1.1324
500 : USD 1.0615
1000 : USD 1.0304

0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.596
3 : USD 1.442
10 : USD 1.274
16 : USD 1.036
43 : USD 0.98

Read More Specifications

     
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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Additional Infomation About Product

TK40E10N1,S1X(S is a N-channel MOSFET transistor manufactured by Toshiba. It uses unipolar technology and has a maximum drain-source breakdown voltage of 100V, a maximum drain current of 40A, a maximum power dissipation of 126W, and a TO220AB package. It is designed for digital switching, speed control, macromodeling, and load switching in consumer and industrial applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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