Product Information

TK16E60W,S1VX(S

TK16E60W,S1VX(S electronic component of Toshiba

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

19: USD 1.9119 ea
Line Total: USD 36.33

48 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 19  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 20
Multiples : 1
20 : USD 1.9286
50 : USD 1.7359

Read More Specifications

     
Manufacturer
Product Category
Polarisation
Kind Of Channel
Case
Mounting
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
Gate Charge
Gate-Source Voltage
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Additional Infomation About Product

TK16E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK16E60WTK16E60WTK16E60WTK16E60W 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.16 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.7 to 3.7 V (V = 10 V, I = 0.79 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 15.8 A D Drain current (pulsed) (Note 1) I 63.2 DP Power dissipation (T = 25) P 130 W c D Single-pulse avalanche energy (Note 2) E 194 mJ AS Avalanche current I 4.0 A AR Reverse drain current (DC) (Note 1) I 15.8 DR Reverse drain current (pulsed) (Note 1) I 63.2 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-09 2013-12-25 1 Rev.3.0TK16E60W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.962 /W th(ch-c) Channel-to-ambient thermal resistance R 83.3 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 21.2 mH, R = 25 , I = 4.0 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2013-12-25 2 Rev.3.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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