Product Information

TK31V60W5,LVQ(S

Name: TK31V60W5,LVQ(S
Brand: Toshiba
SKU: TK31V60W5LVQS_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

TK31V60W5,LVQ(S electronic component of Toshiba

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See Product Specifications
Datasheet

Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN 8x8mm

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 5.5112 ea
Line Total: USD 5.51

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 1 Multiples : 1 TK31V60W5,LVQ(S Toshiba	1 : USD 5.5112 10 : USD 4.2015 100 : USD 3.407 500 : USD 3.0791 1000 : USD 2.8035

0 - WHS 2 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 1 Multiples : 1 TK31V60W5,LVQ(S Toshiba	1 : USD 5.7669 3 : USD 5.1021 4 : USD 4.2064 11 : USD 3.9758

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Additional Infomation About Product

The TK31V60W5, LVQ(S is an N-Channel MOSFET transistor manufactured by Toshiba. It has a maximum blocking voltage of 600V, continuous drain current of 30.8A, and maximum power dissipation of 240W. It has a package size of DFN 8x8mm. This device is used to regulate electric current and distinguish signals in high power and low frequency applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Kind Of Package REEL , TAPE REEL , TAPE
Mounting Smd Smd
Case Dfn 8X8mm Dfn 8X8mm
Kind Of Channel Enhanced Enhanced
Polarisation Unipolar Unipolar
Type Of Transistor N - Mosfet N - Mosfet
Drain-Source Voltage 600 V 600 V
Drain Current 30.8 A 30.8 A
Gate-Source Voltage 30 V 30 V
On-State Resistance 109 mOhms 109 mOhms
Power Dissipation 240 W 240 W
Gate Charge 105 nC 105 nC